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High-pressure synth...
High-pressure synthesized nanostructural MgB2 materials with high performance of superconductivity, suitable for fault current limitation and other applications
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- Prikhna, Tatjana A. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Gawalek, Wolfgang (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- Goldacker, Wilfried (författare)
- Karlsruhe Institute of Technology (KIT), 76344 Eggenstein, Germany
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- Savchuk, Yaroslav M. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Noudem, Jacques (författare)
- CNRS/CRISMAT/ISMRA, CNRS UMR 6508, 14050 Caen, France
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- Soldatov, Alexander (författare)
- Luleå tekniska universitet,Institutionen för tillämpad fysik, maskin- och materialteknik
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- Eisterer, Mikhael (författare)
- TU Wien-Atominstitut, Vienna University of Technology, Institute of Atomic and Subatomic Physics, 1020 Wien, Austria
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- Weber, Hárald W. (författare)
- TU Wien-Atominstitut, Vienna University of Technology, Institute of Atomic and Subatomic Physics, 1020 Wien, Austria
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- Sokolovsky, Vladimir (författare)
- Ben-Gurion University of the Negev, Beer-Sheva 8410, Israel
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- Serga, Maxim (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Dub, Sergey N. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Wendt, Michael (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- You, Shujie (författare)
- Luleå tekniska universitet,Institutionen för tillämpad fysik, maskin- och materialteknik
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- Sergienko, Nina V. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Moshchil, Viktor E. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Tkash, Vasiliy N. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Dellith, Jan (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- Karau, Friedrich (författare)
- H.C. Starck GmbH, Goslar 38642, Germany
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- Tomsic, Mikhael (författare)
- Hyper Tech Research, Inc., Columbus, OH 43212, United States
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- Shmidt, Christa (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- Fresenko, Igor P. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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- Habisreuther, Tobias (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- Litzkendorf, Doris (författare)
- Institut für Photonische Technologien, Jena, D-07745, Germany
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- Meerovich, Viktor (författare)
- Ben-Gurion University of the Negev, Beer-Sheva 8410, Israel
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- Sverdun, Vladimir B. (författare)
- Institute for Superhard Materials, National Academy of Sciences of Ukraine, Kiev 07074, Ukraine
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(creator_code:org_t)
- 2011
- 2011
- Engelska.
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Ingår i: IEEE transactions on applied superconductivity (Print). - 1051-8223 .- 1558-2515. ; 21:3, s. 2694-2697
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A variety of samples made via different routes were investigated. Samples are nanostructured (average grain sizes are about 20 nm). The advantage of high-pressure (HP)-manufactured (2 GPa, 800-1050 degrees C, 1 h) MgB2 bulk is the possibility to get almost theoretically dense (1-2% porosity) material with very high critical current densities reaching at 20 K, in 0-1 T j(c) = 1.2 - 1.0 . 10(6) A/cm(2) (with 10% SiC doping) and j(c) = 9.2 - 7.3 10(5) A/cm(2) (without doping). Mechanical properties are also very high: fracture toughness up to 4.4 +/- 0.04 MPa . m(0.5) and 7.6 +/- 2.0 MPa . m(0.5) at 148.8 N load for MgB2 undoped and doped with 10% Ta, respectively. The HP-synthesized material at moderate temperature (2 GPa, 600 degrees C, 1 h) from B with high amount of impurity C (3.15%) and H (0.87%) has j(c) = 10(3) A/cm(2) in 8 T field at 20 K, highest irreversibility fields (at 18.4 K H-irr = 15 T) and upper critical fields (at 22 K H-C2 = 15 T) but 17% porosity. HP materials with stoichiometry near MgB12 can have T-c = 37 K and j(c) = 6 . 10(4) A/cm(2) at 0 T and H-irr = 5 T at 20 K. The spark plasma synthesized (SPS) material (50 MPa, 600-1050 degrees C 1.3 h, without additions), demonstrated at 20 K, in 0-1 T j(c) = 4.5 - 4 10(5) A/cm(2). Dispersed inclusions of higher magnesium borides, which are usually present in MgB2 structure and obviously create new pinning centers can be revealed by Raman spectroscopy (for the first time a spectrum of MgB7 was obtained). Tests of quench behavior, losses on MgB2 rings and material thermal conductivity show promising properties for fault current limiters. Due to high critical fields, the material can be used for magnets.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
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Prikhna, Tatjana ...
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Gawalek, Wolfgan ...
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Goldacker, Wilfr ...
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Savchuk, Yarosla ...
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Noudem, Jacques
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Soldatov, Alexan ...
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visa fler...
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Eisterer, Mikhae ...
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Weber, Hárald W.
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Sokolovsky, Vlad ...
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Serga, Maxim
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Dub, Sergey N.
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Wendt, Michael
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You, Shujie
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Sergienko, Nina ...
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Moshchil, Viktor ...
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Tkash, Vasiliy N ...
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Dellith, Jan
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Karau, Friedrich
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Tomsic, Mikhael
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Shmidt, Christa
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Fresenko, Igor P ...
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Habisreuther, To ...
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Litzkendorf, Dor ...
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Meerovich, Vikto ...
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Sverdun, Vladimi ...
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