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- Mei, A B, et al.
(författare)
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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering
- 2013
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 31:6, s. 061516-
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Tidskriftsartikel (refereegranskat)abstract
- Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 degrees C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001)(ZrN)parallel to(001)(MgO) and [100](ZrN)parallel to[100](MgO). The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho(300K) of 12.0 mu Omega-cm, a temperature coefficient of resistivity between 100 and 300K of 5.6 x 10(-8) Omega-cm K-1, a residual resistivity rho(o) below 30K of 0.78 mu Omega-cm (corresponding to a residual resistivity ratio rho(300K)/rho(15K) = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi(parallel to) = 18 nm and xi(perpendicular to) = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 +/- 1.7 and 450 +/- 25 GPa.
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| 5. |
- Whitlow, Harry J, et al.
(författare)
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Formation of cobalt silicide from filter metal vacuum arc deposited films
- 2006
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - : Elsevier BV. - 0168-583X. ; 247:2, s. 271-278
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Tidskriftsartikel (refereegranskat)abstract
- The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900 degrees C, CiSi(2) was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenelation at 600 degrees C which became less pronounced after annealing at 800 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
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