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- Wu, D., et al.
(author)
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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack
- 2005
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 77:1, s. 36-41
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Journal article (peer-reviewed)abstract
- Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-x dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage current reduction compared to SiO2 with the same EOT and a mobility around 20% lower than the universal curve. The strained SiGe surface-channel pMOSFETs with the same gate stack showed an enhanced current drive and hole mobility. The Si nMOSFETs, however, exhibited a degraded subthreshold slope and a lower current drive even compared with the Si pMOSFETs. Possible reasons for the degradation of Si nMOSFETs were discussed.
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