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Träfflista för sökning "WFRF:(Seifert G) srt2:(2000-2004)"

Sökning: WFRF:(Seifert G) > (2000-2004)

  • Resultat 1-5 av 5
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1.
  • Carlberg, Patrick, et al. (författare)
  • Nanoimprint - a tool for realizing nano-bio research
  • 2004
  • Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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4.
  • Zwiller, Valéry, et al. (författare)
  • Optical studies of single quantum dots in microdisks
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • Microdisks containing single, selected self-assembled quantum dots were fabricated and their optical properties were studied. Using two electron beam lithography exposures, the dots were positioned at the microdisks edges where the optical field reaches its maximum with sub-micron precision. High Q-values, in excess of 13000 were achieved and the coupling of the emission from single quantum dots to the whispering modes was studied using cw and time resolved techniques
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5.
  • Zwiller, V., et al. (författare)
  • Studies of self-assembled InP quantum dots in planar microcavities
  • 2000
  • Ingår i: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. - Strasbourg, France. ; 69:Lausanne, Switzerland, s. 314-317
  • Tidskriftsartikel (refereegranskat)abstract
    • Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 33λ/4 cavity. The Fabry-Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes.
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  • Resultat 1-5 av 5

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