Oxidation and reduction of TiC/Co in O2 and H2

• A film of titanium carbide was deposited by the chemical vapor deposition technique on a molybdenum substrate and subsequently exposed to oxygen and hydrogen at elevated temperatures. Surface intermediates were studied by Auger electron spectroscopy. Oxidation of the bare film at 1000 K resulted in titanium oxide formation, preferentially at grain boundaries. This oxide was partly reduced in H2 under mild conditions. The low coverage of cobalt deposited at 300 K increases the rate of oxidation dramatically and a thick oxide was formed. This oxide is very stable and can only be partially reduced by prolonged heating in vacuo or in dihydrogen. Metallic cobalt wets the TiC under reducing conditions, but the mobility is low below 1000 K.

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NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

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