| 1. |
- Guo, X. W., et al.
(författare)
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Effects of SiO2/Al2O3, MgO modification and hydrothermal treatment on the catalytic activity of HZSM-5 zeolites in the methylation of 4-methylbiphenyl with methanol
- 2004
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Ingår i: Applied Catalysis A. - : Elsevier BV. - 0926-860X .- 1873-3875. ; 261:2, s. 183-189
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Tidskriftsartikel (refereegranskat)abstract
- The objective of this work is to study the effects Of SiO2/Al2O3 of HZSM-5, MgO modification and hydrothermal treatment on methylation of 4-methylbiphenyl (4-MBP) with methanol under fixed-bed down-flow conditions. The results show that, with an increase in the SiO2/Al2O3 of HZSM-5 (from 50 to 150, molar ratio), the selectivity to 4,4'-dimethylbiphenyl (4,4'-DMBP) increases from 25 to 79%. MgO modification also increases the selectivity to 4,4'-DMBP, but leads as well to low catalyst activity and rapid deactivation. Hydrothermal treatment not only increases the selectivity, but also improves the stability. When CBV1502 (SiO2/Al2O3 = 150) catalyst was hydrothermally treated at 500degreesC, the selectivity to 4,4'-DMBP increased to 85%. The selectivity to 4,4'-DMBP was further improved to about 90% by the increasing in the amount of mesitylene in the feed as solvent.
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| 2. |
- Guo, X. W., et al.
(författare)
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Methylation of 4-methylbiphenyl with methanol over metal oxide-modified HZSM-5 zeolite catalysts
- 2003
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Ingår i: Cuihuà xuébào. - 0253-9837 .- 1872-2067. ; 24:5, s. 333-337
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Tidskriftsartikel (refereegranskat)abstract
- A series of HZSM-5 zeolite catalysts modifed with metal oxides (MgO, CaO, SrO, BaO, ZnO, La2O3 and CeO2) were prepared by impregnation method and characterized by XRD, TPD and N-2-adsorption. Methylation of 4-methylbiphenyl (4-MBP) with methanol to 4,4'-dimethylbiphenyl (4,4'-DMBP) was carried out over the prepared catalysts under fixed-bed down-flow conditions. The results showed that the MgO-modified HZSM-5 can significantly improve the selectivity for target product 4,4'-DMBP (up to 80 % vs only 13 % over the parent HZSM-5). The effects of metal oxides on 4,4'-DMBP selectivity are arranged in the following order: MgO>SrOapproximate toZnOapproximate toCaOapproximate toLa(2)O(3)>BaO>CeO2. The effects of MgO contents, precursor-salt types, and loading methods were further investigated, and the results revealed that during 4-MBP conversion, proper MgO loading (5.6 %) can be more effective, and the ion-exchange methed is much better than the impregnation method. However, it is difficult to get higher metal oxide loading by using the ion-exchange method. The high selectivity over HZSM-5 modified with MgO largely results from the depression of 4,4-DMBP second reactions such as isomerization, dealkylation and alkylation, as demonstrated by the reaction of 4,4'-DMBP as reactant over MgO/ZSM-5 catalyst and HZSM-5 zeolite.
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| 3. |
- Guo, X. W., et al.
(författare)
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Shape-selective methylation of 4-methylbiphenyl to 4,4 '-dimethylbiphenyl over zeolite HZSM-5 modified with metal oxides of MgO, CaO, SrO, BaO, and ZnO
- 2003
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Ingår i: Catalysis Letters. - 1011-372X .- 1572-879X. ; 87:02-jan, s. 25-29
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Tidskriftsartikel (refereegranskat)abstract
- A series of ZSM-5 samples modified with metal oxides MO(M = Mg, Ca, Sr, Ba and Zn) were employed for the alkylation of 4-methylbiphenyl (4-MBP) with methanol to 4,4'-dimethylbiphenyl (4,4'-DMBP) under fixed-bed down-flow conditions. The methylation results showed that the use of basic metal oxides can effectively enhance the selectivity to the target product 4,4'-DMBP. MgO is the most effective modifier among the metal oxides used and it can improve selectivity to 4,4'-DMBP up to 80% as compared to only 13% over the parent zeolite HZSM-5. The modi. cation effectiveness of metal oxides on 4,4'-DMBP selectivity can be arranged in the order MgO> SrO similar to ZnO similar to CaO> BaO. The optimization of MgO modi. cation through the content, salt types and loading methods revealed that proper MgO loading (5.6 wt%) can be more effective, and the impregnation method is much better than ion exchange. The correlation of physicochemical properties (TPD, TGA, chemical analysis and chemical adsorption, etc.) of the modified HZSM-5 with the catalytic data showed that the high selectivity over ZSM-5 modified with MgO largely results from the effective suppression of 4,4'-DMBP secondary reactions such as isomerization, dealkylation and alkylation.
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| 4. |
- Li, Z-F, et al.
(författare)
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Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
- 2003
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Ingår i: Journal of Electronic Materials. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 32:8, s. 913-916
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Tidskriftsartikel (refereegranskat)abstract
- Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.
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| 5. |
- Lu, W., et al.
(författare)
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Application of combinatorial material chip method on the improvement of quantum dots emission efficiency
- 2004
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Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5277:1, s. 99-108
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Konferensbidrag (refereegranskat)abstract
- The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.
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| 6. |
- Zhao, Q.X., et al.
(författare)
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Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
- 2001
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 63
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Tidskriftsartikel (refereegranskat)abstract
- We present an optical study of thin Zn-doped GaAs layers embedded in bulk GaAs, grown by metal-organic vapor-phase-epitaxy by means of stationary and time-resolved optical spectroscopy. The concentration of the Zn acceptors was aimed at 2×1020/cm3 in 4-nm-wide doping regions. The intensity of the optical radiative transition (so called the F emission) appearing in photoluminescence spectra was found to be related to holes confined at doping regions. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 to 1.49 eV as the excitation density changes from about 40 mW/cm2 to 23 W/cm2. The dynamic properties of the F-emission band have been studied by time-resolved spectroscopy. The F emission shows a nonexponential decay character. The decay time of the F emission exhibits a strong dependence on the detection energy within the F-emission band. The decay time becomes longer as the detection energy is redshifted.
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