| 1. |
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| 2. |
- Zhang, Shi-Li, et al.
(författare)
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Abnormal anti-Stokes Raman scattering of carbon nanotubes
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:3
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Tidskriftsartikel (refereegranskat)abstract
- Abnormal anti-Stokes Raman scattering (AASR) was unambiguously observed in carbon nanotubes (CNT's). In contrast to traditional Raman scattering theory, the absolute value of the Raman frequency of the anti-Stokes peak is not the same as that of the corresponding Stokes peak. It was demonstrated that AASR scattering originates from the unique nanoscale cylindrical structure of CNT's that can be considered naturally as a graphite structure with an intrinsic defect from its rolling. The double-resonance Raman scattering theory was applied to interpret the scattering mechanism of the AASR phenomenon successfully and quantitatively.
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| 3. |
- Aberg, J, et al.
(författare)
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Electrical properties of the TiSi2-Si transition region in contacts : The influence of an interposed layer of Nb
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:5, s. 2380-2388
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Tidskriftsartikel (refereegranskat)abstract
- The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternary alloy (Nb,Ti)Si-2 in the C40 crystallographic structure adjacent to the Si substrate. Depending on the nature of the Si substrates and/or the amount of the initial Nb, the interfacial C40 (Nb,Ti)Si-2 leads, in turn, to either epitaxial growth of a highly faulted metastable C40 TiSi2 or formation of the desired C54 TiSi2 at a lower temperature than needed for it to form in reference samples with Ti deposited directly on Si. On p-type substrates doped to various concentrations, the Nb also leads to a considerably lower specific contact resistivity than that obtained in the reference samples: a twofold to fourfold reduction in the contact resistivity is found using cross-bridge Kelvin structures in combination with two-dimensional numerical simulation. As C40 (Nb,Ti)Si-2 forms at the interface when an interfacial Nb is present, the interface characterized is likely to represent the one between (Nb,Ti)Si-2 and Si. For the reference samples, the interface studied is between TiSi2 and Si.
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| 4. |
- Andersson, J. O., et al.
(författare)
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THERMO-CALC & DICTRA, computational tools for materials science
- 2002
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Ingår i: Calphad. - 0364-5916 .- 1873-2984. ; 26:2, s. 273-312
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Tidskriftsartikel (refereegranskat)abstract
- Software for calculation of phase diagrams and thermodynamic properties have been developed since the 1970's. Software and computers have now developed to a level where such calculations can be used as tools for material and process development. In the present paper some of the latest software developments at Thermo-Calc Software are presented together with application examples. It is shown how advanced thermodynamic calculations have become more accessible since: - A more user-friendly windows version of Thermo-Calc, TCW, has been developed. - There is an increasing amount of thermodynamic databases for different materials available. - Thermo-Calc can be accessed from user-written software through several different programming interfaces are available which enables access to the thermodynamic software from a user-written software. Accurate data for thermodynamic properties and phase equilibria can then easily be incorporated into software written in e.g. C++, Matlab and FORTRAN. Thermo-Calc Software also produces DICTRA, a software for simulation of diffusion controlled phase transformations. Using DICTRA it is possible to simulate processes such as homogenization, carburising, microsegregation and coarsening in multicomponent alloys. The different models in the DICTRA software are briefly presented in the present paper together with some application examples.
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| 5. |
- Cooper, K., et al.
(författare)
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New Grid Scheduling and Rescheduling Methods in the GrADS Project
- 2004
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Konferensbidrag (refereegranskat)abstract
- Summary form only given. The goal of the Grid Application Development Software (GrADS) project is to provide programming tools and an execution environment to ease program development for the grid. We present recent extensions to the GrADS software framework: 1. A new approach to scheduling workflow computations, applied to a 3D image reconstruction application; 2. A simple stop/migrate/restart approach to rescheduling grid applications, applied to a QR 3. A process-swapping approach to rescheduling, applied to an N-body simulation. Experiments validating these methods were carried out on both the GrADS MacroGrid (a small but functional grid) and the MicroGrid (a controlled emulation of the grid) and the results were demonstrated at the SC2003 conference.
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| 6. |
- d'Heurle, F. M., et al.
(författare)
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Formation of C54TiSi(2) : Effects of niobium additions on the apparent activation energy
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:12, s. 6409-6415
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Tidskriftsartikel (refereegranskat)abstract
- The formation of C54 TiSi2 using Ti-Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si-2 was observed. This phase transformed to C54 (Nb,Ti)Si-2 above 950 degreesC. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si-2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb.
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| 7. |
- Jarmar, T., et al.
(författare)
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Cross-sectional transmission electron microscopy study of the influence of niobium on the formation of titanium silicide in small-feature contacts
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:8, s. 4480-4484
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Tidskriftsartikel (refereegranskat)abstract
- The influence of a Nb layer between Si and Ti on the formation of TiSi2 in small-feature contacts and of the substrate doping level has been studied using transmission electron microscopy in combination with convergent-beam electron diffraction. For an As dose of 2.5x10(16) cm(-2), a mixture of C49 and partially agglomerated C54 TiSi2 grains was found in some of the 5x5 mum(2) contact windows, while only C49 existed in the 0.7x0.7 mum(2) windows. Agglomeration is shown to lead to possible C49-C54 coexistence, as well as erroneous interpretation of the C54 nucleation density. Decreasing the As dose to 5x10(15) cm(-2) leads to a thicker TiSi2 layer, but does not have a major influence on phase formation in the small windows, although only C54 TiSi2 was found in the large ones. In the presence of a thin Nb layer between Ti and poly-Si, C40 (Ti,Nb)Si-2 was consistently found in all contacts, indicating that formation does not depend on the contact size at least down to 0.5 mum(2). Surprisingly, Ti was found on both sides of the (Ti,Nb)Si-2 layer and the silicide near the interface to Si was relatively rich in Ti instead of Nb.
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| 8. |
- Jarmar, T., et al.
(författare)
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Germanium-induced texture and preferential orientation of NiSi1-xGex layers on Si1-xGex
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70:23, s. 1-11
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Tidskriftsartikel (refereegranskat)abstract
- NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.
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| 9. |
- Jarmar, T., et al.
(författare)
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Morphological and phase stability of nickel-germanosilicide on Si1-xGex under thermal stress
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7193-7199
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Tidskriftsartikel (refereegranskat)abstract
- Continuous and uniform Ni(Si,Ge) layers are formed on polycrystalline Si and Si0.42Ge0.58 substrate films at 500 degreesC by rapid thermal processing. The germanosilicide is identified as NiSi0.42Ge0.58, i.e., with the same Si-to-Ge ratio as in the substrate. The NiSi0.42Ge0.58 layer has agglomerated at 600 degrees C. This is accompanied by a diffusion of Ge out from the germanosilicide grains and the growth of a Ge-rich SiGe region in their close vicinity. These changes cause a slight variation in the atomic composition of Ni(Si,Ge) detectable for individual grains by means of energy dispersive spectroscopy. Above 600 degreesC, substantial outdiffusion of Ge from the Ni(Si,Ge) grains occurs concurrently with the migration of the grains into the substrate film away from the surface area leaving a Ge-rich SiGe region behind. These observations can be understood with reference to calculated Ni-Si-Ge ternary phase diagrams with and without the inclusion of NiSi2. When Ge is present, the Ni-based self-aligned silicide process presents a robust technique with respect to device applications.
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| 10. |
- Li, B., et al.
(författare)
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Low-temperature dependence of midinfrared optical constants of lead-germanium-telluride thin film
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:6, s. 3556-3561
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Tidskriftsartikel (refereegranskat)abstract
- The design and manufacture of diode lasers for gas analysis or multilayer thin-film optical devices used at low-temperature require the refractive index and the temperature coefficient of IV-VI compound over a significant temperature range. In this article, the refractive index and the absorption coefficient of Pb0.94Ge0.06Te thin film have been determined from transmission spectra measured at temperature between 80 and 300 K in the spectral range of 2.5-8.5 mum by fitting based on a Lorentz-oscillator model. It is found that the maximum refractive index occurs at 150 K, which corresponds to the structural phase transition from rocksalt to rhombohedrally distorted structure and reflects an increase of lattice polarizability. The value of the index of refraction is 5.350-6.000 in the spectral range of 4.0-8.5 mum for all measured temperatures, which reveals that Pb1-xGexTe is a highly refractive infrared material. The temperature coefficient of refractive index, dn/dT, is found to be -0.006-0.002 K-1 in the spectral range of 3.0-8.5 mum for all measured temperature. An empirical formula that fits the temperature coefficient in the spectral range of 4.0-8.5 mum is presented. The dependence of the transmission and absorption spectra on decreasing temperature can be explained by the modification of the energy-band structure due to rhombohedral distortions. The conclusion can be drawn that anomalies corresponding to the ferroelectric phase transition occur in both refractive index and absorption coefficient of Pb1-xGexTe alloy.
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