| 1. |
- Zhang, Shi-Li, et al.
(författare)
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Abnormal anti-Stokes Raman scattering of carbon nanotubes
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:3
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Tidskriftsartikel (refereegranskat)abstract
- Abnormal anti-Stokes Raman scattering (AASR) was unambiguously observed in carbon nanotubes (CNT's). In contrast to traditional Raman scattering theory, the absolute value of the Raman frequency of the anti-Stokes peak is not the same as that of the corresponding Stokes peak. It was demonstrated that AASR scattering originates from the unique nanoscale cylindrical structure of CNT's that can be considered naturally as a graphite structure with an intrinsic defect from its rolling. The double-resonance Raman scattering theory was applied to interpret the scattering mechanism of the AASR phenomenon successfully and quantitatively.
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| 2. |
- Cooper, K., et al.
(författare)
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New Grid Scheduling and Rescheduling Methods in the GrADS Project
- 2004
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Konferensbidrag (refereegranskat)abstract
- Summary form only given. The goal of the Grid Application Development Software (GrADS) project is to provide programming tools and an execution environment to ease program development for the grid. We present recent extensions to the GrADS software framework: 1. A new approach to scheduling workflow computations, applied to a 3D image reconstruction application; 2. A simple stop/migrate/restart approach to rescheduling grid applications, applied to a QR 3. A process-swapping approach to rescheduling, applied to an N-body simulation. Experiments validating these methods were carried out on both the GrADS MacroGrid (a small but functional grid) and the MicroGrid (a controlled emulation of the grid) and the results were demonstrated at the SC2003 conference.
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| 3. |
- Zhang, L., et al.
(författare)
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Effects of intense laser irradiation on Raman intensity features of carbon nanotubes
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 65:7
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Tidskriftsartikel (refereegranskat)abstract
- The effect of intense laser irradiation on the features of Raman intensity of carbon nanotubes (CNT's) has been examined. The intensity of the D band decreases and the relative intensity between the G peaks changes with increasing laser power density (LPD) and remain unchanged with subsequent decrease in LPD. This behavior is different from the reversible variation of the G band frequency in the same process of power increase and subsequent decrease. It has been demonstrated that such irreversible change in intensity features originates from sample purification. This result suggests a simple and fast CNT purification method using intense laser irradiation.
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| 4. |
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| 5. |
- Böhm, S, et al.
(författare)
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Enhancement of dielectronic recombination by external electromagnetic fields
- 2003
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Ingår i: Hyperfine Interactions. - 0304-3843. ; 146-147:1-4, s. 23-27
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Tidskriftsartikel (refereegranskat)abstract
- The enhancement of the dielectronic recombination rate of lithiumlike Ne7+ and O5+ ions by external electromagnetic fields has been measured at the storage ring CRYRING. The energy range covered all 1s(2)2pnl dielectronic recombination resonances attached to the 2s --> 2p core excitation. Electric fields up to 1436 V/cm were applied in the Ne7+ experiment and the saturation of the enhancement with increasing electric field could clearly be seen. In the O5+ experiment the enhancement was studied as a function of the Rydberg quantum number n.
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| 6. |
- Böhm, S, et al.
(författare)
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Influence of electromagnetic fields on the dielectronic recombination of Ne7+ and O5+ ions
- 2001
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Ingår i: Physica Scripta. Topical Issues. - 0281-1847. ; T92, s. 395-397
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Tidskriftsartikel (refereegranskat)abstract
- Within a series of measurements of the dielectronic recombination (DR) of lithium-like ions we have determined the enhancement of the recombination rate in the presence of crossed electric and magnetic fields for Ne7+ and O5+ ions. In both cases the electron energy range covers a DR resonances attached to 2s --> 2p(1/2) and 2s --> 2p(3/2) Delta_n = 0 core excitations. For increasing field the enhancement factor first increases linearly with the electric field and then saturates. In order to investigate the field effect on high-n Rydberg states the ion energy in the O5+ experiment was changed from 9.4 MeV/u to 5 MeV/u and 3.26 MeV/u. With the variation of the ion energy the field ionization of Rydberg states in the analyzing magnet is influenced. This enabled us to study the field enhancement for a narrow bandwidth of n-states.
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| 7. |
- Böhm, S, et al.
(författare)
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Influence of electromagnetic fields on the dielectronic recombination of Ne7+ ions
- 2001
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Ingår i: Physical Review A. Atomic, Molecular, and Optical Physics. - 1050-2947. ; 64:3, s. 032707/1-032707/7
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Tidskriftsartikel (refereegranskat)abstract
- The influence of crossed electric and magnetic fields on dielectronic recombination of Ne7+ ions has been measured at the Stockholm heavy-ion storage ring CRYRING. The electron energy range covered all dielectronic recombination resonances attached to 2s-2p1/2 and 2s-2p3/2 core excitations. Two sets of measurements at magnetic fields of 180 mT and 30 mT have been performed. For the measurement at 180 mT we applied 25 different electric fields between 0 and 1400 V/cm. The resonance strength for dielectronic recombination via high Rydberg states initially increases linearly with electric field and later levels out. At a magnetic field of 30 mT we applied 15 different electric fields ranging from 0 to 140 V/cm. Compared to the measurement at 180 mT the initial slope of the rate enhancement was larger by almost a factor of 2. The fraction of resonant strength not measured due to field ionization is estimated by a model calculation of dielectronic recombination cross sections.
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| 8. |
- Pejnefors, J., et al.
(författare)
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Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor
- 2001
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 4:11, s. G98-G100
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Tidskriftsartikel (refereegranskat)abstract
- Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is studied by monitoring the growth rate of films deposited on bare S. silicon-on-insulator (SOI), and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si. due to different kinetics dictating the two depositions. Epitaxy of Si on SOI shows a higher overall growth rate than on hare Si. Likewise, deposition of polycrystalline Si on oxidized Si wafer with a 4000 Angstrom thick oxide has a higher growth rate than on that with 15 Angstrom oxide. These are attributed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation in affecting the growth rate for the depositions studied.
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| 9. |
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| 10. |
- Zhang, J. G., et al.
(författare)
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Microstructure and mechanical properties of spray formed ultrahigh-carbon steels
- 2004
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Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5093 .- 1873-4936. ; 383:1, s. 45-49
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Tidskriftsartikel (refereegranskat)abstract
- The microstructure and mechanical properties of the spray formed 1.25C-3.0Si-1.5Cr ultrahigh-carbon steel (UHCS) were described. The 1.25C-3.0Si-1.5Cr UHCS was processed by spray forming to break up carbide networks. The fine pearlites with average interlamellar spacing of 0.20 mum was observed in the as-sprayed microstructure. The ultimate tensile strength and the pearlite spacing can be related by the Hall-Petch equation. The as-sprayed 1.25C-3.0Si-1.5Cr UHCS consisting of fine lamellar pearlites has been shown to exhibit superplastic behavior at elevated temperature. The dramatic change of microstructure from fine lamellar pearlites to equiaxed grains stabilized by spheroidized particles during superplastic deformation has been observed. The estimation on the basis of thermodynamics shows that the content of chromium of 1.54 wt.% is needed to inhibit graphite formation in the l.25C-3.OSi-1.5Cr UHCS.
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