1. |
- Agui, A, et al.
(författare)
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Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures
- 1999
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 59:16, s. 10792-10795
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Aluminum 2p soft-x-ray emission and absorption spectra (XES and XAS) of a GaAs/AIAs/GaAs heterostructure semiconductor have been measured with high-energy resolution. The Al 2p XES shows a similar feature to that of AlxGa1-xAs alloys. Strong Al 2p core ex
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2. |
- Agui, A, et al.
(författare)
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Electronic structure of BP studied by resonant soft X-ray emission spectroscopy
- 1999
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Ingår i: JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. - : PHYSICAL SOCIETY JAPAN. - 0031-9015. ; 68:1, s. 166-169
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The B1s and P2p soft x-ray emission of BP has been measured using monochromatic synchrotron radiation as an excitation source. The band-gap, energy was estimated lu be about 2.1 eV which is in good agreement with other experiments. The emission bands whic
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3. |
- Inoue, K, et al.
(författare)
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Angular dependence of Al-2p X-ray yield spectra of GaAs/AlAs/GaAs heterostructures
- 1999
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Ingår i: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. - : JAPAN J APPLIED PHYSICS. - 0021-4922. ; 38, s. 572-575
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The X-ray emission yield by the Al-2p core-exciton excitation in GaAs/AlAs/GaAs heterostructures is studied theoretically: especially the angular correlation between absorbed and emitted X-rays are discussed. It becomes clear that the angular dependence o
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