| 1. |
- Lewen, R., et al.
(författare)
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High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2398-2402
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Tidskriftsartikel (refereegranskat)abstract
- We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated.
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| 2. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- 2002
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
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| 3. |
- Shorubalko, Ivan, et al.
(författare)
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A novel frequency-doubling device based on three-terminal ballistic junction
- 2002
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Ingår i: Device Research Conference (Cat. No.02TH8606). - 0780373170 ; , s. 159-160
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Konferensbidrag (refereegranskat)abstract
- Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
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| 4. |
- Shorubalko, Ivan, et al.
(författare)
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A novel frequency-multiplication device based on three-terminal ballistic junction
- 2002
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 23:7, s. 377-379
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
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| 5. |
- Xu, Hongqi, et al.
(författare)
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A novel device principle for nanoelectronics
- 2002
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Ingår i: Materials Science and Engineering C: Materials for Biological Applications. - 0928-4931. ; 19:1-2, s. 417-420
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Tidskriftsartikel (refereegranskat)abstract
- We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
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| 6. |
- Xu, Hongqi, et al.
(författare)
-
Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed
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| 7. |
- Song, Aimin, et al.
(författare)
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Quantum behavior as well as room-temperature and 50 GHz operations of novel nonlinear devices and nanomaterials
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Novel nano-rectifiers based on ballistic electron transport have been fabricated from a high electron-mobility InGaAs/InP wafer. Because of the sufficiently small device size, operations at room temperature are achieved. Furthermore, the devices are shown to work not only up to at least 50 GHz but also with sensitivity to microwave reaching that of the commercial microwave diodes. Based on a similar microscopic mechanism, we have also constructed, to our knowledge, the first artificial electronic nanomaterial that operates at room temperature. Promising possibilities for practical applications, such as microwave detection and second-harmonic generation, are discussed. While the rectifying effect can be well described in the picture of classical ballistic transport, the pronounced output voltage reversal observed at low temperatures strongly suggests that quantum effect may become completely dominant
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