2. |
- da Silva, AF, et al.
(författare)
-
Impurity resistivity of the double-donor system Si : P,Bi
- 1999
-
Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 60:23, s. 15824-15828
-
Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].
|
|