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| 2. |
- Bobba, A Gosh, et al.
(författare)
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Numerical simulation of fatty acids in lake sediments
- 1996
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Ingår i: Water, Air, and Soil Pollution. - 1573-2932. ; 89, s. 77-90
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Tidskriftsartikel (refereegranskat)abstract
- The finite element model was successfully applied to predict the Pb-210 and total extractable fatty acid concentrations at different depths in two sediment cores from Lake Ontario by using different transport parameters. The transport parameters were computed from Pb-210 data. These parameters were used to simulate the total extractable fatty acid concentrations at different depths. The computed results were compared with observed data and results were compared by statistical methods. Good agreement was achieved though improved results were observed in a two layer model accounting for bioturbation in the upper 4–6 cm of sediment. By modifying this model is useful to apply the contaminant transport in lake sediments, industrial waste disposal ponds, and fish ponds with different geological, physical, chemical and biological parameters at different depths.
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| 3. |
- Krishna, G. R., et al.
(författare)
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Role of Pt content in the microstructural development and oxidation performance of Pt-aluminide coatings produced using a high-activity aluminizing process
- 1998
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Ingår i: Materials Science and Engineering A. ; 251:1-2, s. 40-47
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Tidskriftsartikel (refereegranskat)abstract
- The present study highlights the effect of Pt content on the microstructure of Pt-aluminide coatings produced using a single-step high-activity aluminizing process. The amount of Pt in the coating was varied by changing the thickness of the initial electroplated Pt layer between 1 and 15 μm. The aluminium uptake from the pack was found to be almost the same for all the coatings produced using a Pt layer of thickness 2.5 μm and above, with a somewhat lower uptake for the coating corresponding to a 1 μm thick Pt layer. The coating microstructure, which consisted of an outer two-phase (PtAl2 in a matrix of NiAl) layer, an intermediate NiAl layer and an interdiffusion layer, was also found to be independent of the Pt layer thickness when it was in the range 2.5-10 μm. In the case of the 1 μm Pt layer, however, the whole of the Pt remained in solid solution in the NiAl phase. For a Pt layer thickness exceeding 10 μm, on the other hand, a continuous surface layer of PtAl2 phase was observed. The above mentioned influence of the thickness of the Pt plated layer on the microstructure of the Pt-aluminide coatings observed in the present investigation could be explained in terms of the Pt concentration in the diffusion layer resulting from the interdiffusion between the Pt layer and the superalloy substrate during the pre-aluminizing diffusion treatment. Cyclic oxidation tests on these Pt-aluminide coatings reveal that the presence of Pt in aluminide coatings, in general, enhances oxidation resistance. However, in order to fully realize the beneficial effects of Pt on oxidation behaviour, a certain minimum Pt content in the coating was found to be necessary.
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| 5. |
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| 6. |
- Smith, KE, et al.
(författare)
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Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N
- 1998
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Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. - 1071-1023. ; 16:4, s. 2250-2253
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree
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| 7. |
- Stagarescu, CB, et al.
(författare)
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Electronic structure of GaN measured using soft-x-ray emission and absorption
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:24, s. 17335-17338
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The electronic structure of thin-film wurtzite GaN has been studied using a combination of soft-x-ray absorption and emission spectroscopies. We have measured the elementally and orbitally resolved GaN valence and conduction bands by recording Ga L and N
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