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- Intarasiri, S., et al.
(författare)
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RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study
- 2006
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 249, s. 859-864
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Tidskriftsartikel (refereegranskat)abstract
- For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIMPL computer codes. We also found that annealing at temperatures as high as 1000 degrees C had quite limited effect on the redistribution of carbon in silicon.
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| 3. |
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| 4. |
- Intarasiri, S., et al.
(författare)
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Characterization of the crystalline quality of beta-SiC formed by ion beam synthesis
- 2006
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 249, s. 851-855
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Tidskriftsartikel (refereegranskat)abstract
- The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (100) high-purity p-type silicon wafers at room temperature and 400 degrees C, respectively, to doses in excess of 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at temperatures of 800, 900 and 1000 degrees C, respectively. Elastic recoil detection analysis was used to investigate depth distributions of the implanted ions and infrared transmittance (IR) measurement was used to characterize formation of SiC in the implanted Si substrate. Complementary to IR, Raman scattering measurements were also carried out. Levels of the residual damage distribution of the samples annealed at different temperatures were compared with that of the as-implanted one by Rutherford backscattering spectrometry (RBS) in the channeling mode. The results show that C-ion implantation at the elevated temperature, followed by high-temperature annealing, enhances the synthesis of crystalline SiC.
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