| 1. |
- Elsner, J., et al.
(författare)
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Deep acceptors trapped at threading-edge dislocations in GaN
- 1998
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 58:19, s. 12571-12574
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Tidskriftsartikel (refereegranskat)abstract
- Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. VGa-ON is found to be a deep double acceptor, VGa-(ON)2 is a deep single acceptor, and VGa-(ON)3 at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band.
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| 2. |
- Elsner, J., et al.
(författare)
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Structural and electrical properties of threading dislocations in GaN
- 1997
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Ingår i: Defects in semiconductors. - : Trans Tech Publications Inc.. ; , s. 1203-1210
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Konferensbidrag (refereegranskat)abstract
- The atomic structures and electrical properties for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. The threading screw dislocations are found to be stable with an open-core whereas the threading edge dislocations possess filled cores.
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| 3. |
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| 4. |
- Sitch, P.K., et al.
(författare)
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An ab initio study of the 90° partial dislocation core in diamond
- 1997
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Ingår i: Journal de Physique III. - : EDP Sciences. - 1155-4320 .- 1286-4897. ; 7:7, s. 1381-1387
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Tidskriftsartikel (refereegranskat)abstract
- The electronic and structural properties of the 90° glide partial dislocation in diamond are investigated using an ab initio local density functional cluster method. The core C-C bond is found to be reconstructed with a bond length 5% longer than that in bulk diamond. The formation and migration energy of the kink on the dislocation are calculated to be 0.32 and 2.97 eV respectively. Further, the shift of the gap levels during kink motion suggests that p-type doping will lead to an increase in the mobility of the partial.
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