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- Wang, L. W., et al.
(författare)
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Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
- 2000
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 33:12, s. 1551-1555
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide is an important wide-band-gap semiconductor for high temperature, high-voltage, high-power and high-frequency devices. Electrical isolation is an important aspect for device applications. In this report, oxygen ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type 6H-SiC to investigate the possibility of forming a high-resistive layer. The damage behaviour and internal stress were checked by Rutherford backscattering spectroscopy and channelling, and an x-ray rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabricated on the annealed samples and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias; the electrical isolation effect was observed at proper implantation dosages. The results indicated that there exists a dose window for electrical isolation.
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| 2. |
- Wang, L. W., et al.
(författare)
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Structural and electrical characteristics of oxygen-implanted 6H-SiC
- 2000
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 169, s. 1-5
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide is an important wide band gap semiconductor for high-temperature, high-voltage, high-power and high-frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this report, oxygen ions, 70 keV with dose ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type BH-SIC. The damage behavior and internal stress were checked by Rutherford backscattering spectroscopy and channeling and X-rays rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14)/cm(-2). After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is above the critical value. Schottky structures of Au/SiC have been fabricated and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias, electrical isolation effect was observed at proper implantation dose. The results indicated that there exists a dose window for electrical isolations. X-ray photoelectron spectroscopy (XPS) confirmed the formation of silicon oxide and CO due to oxygen implantation. In case of high-dose ion implantation, graphite phase was detected.
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| 3. |
- Aksoy, Selim, et al.
(författare)
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Algorithm Performance Contest
- 2000
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Ingår i: Proceedings. 15th International Conference on Pattern Recognition, 2000. - : IEEE. - 0769507506 ; , s. 870-876
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Konferensbidrag (refereegranskat)abstract
- This contest involved the running and evaluation of computer vision and pattern recognition techniques on different data sets with known groundwidth. The contest included three areas; binary shape recognition, symbol recognition and image flow estimation. A package was made available for each area. Each package contained either real images with manual groundtruth or programs to generate data sets of ideal as well as noisy images with known groundtruth. They also contained programs to evaluate the results of an algorithm according to the given groundtruth. These evaluation criteria included the generation of confusion matrices, computation of the misdetection and false alarm rates and other performance measures suitable for the problems. The paper summarizes the data generation for each area and experimental results for a total of six participating algorithms
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