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- Fu, Yifeng, 1984, et al.
(författare)
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Graphene related materials for thermal management
- 2020
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- Almost 15 years have gone ever since the discovery of graphene as a single atom layer. Numerous papers have been published to demonstrate its high electron mobility, excellent thermal and mechanical as well as optical properties. We have recently seen more and more applications towards using graphene in commercial products. This paper is an attempt to review and summarize the current status of the research of the thermal properties of graphene and other 2D based materials including the manufacturing and characterization techniques and their applications, especially in electronics and power modules. It is obvious from the review that graphene has penetrated the market and gets more and more applications in commercial electronics thermal management context. In the paper, we also made a critical analysis of how mature the manufacturing processes are; what are the accuracies and challenges with the various characterization techniques and what are the remaining questions and issues left before we see further more applications in this exciting and fascinating field.
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| 2. |
- Visser, Dennis, et al.
(författare)
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Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies
- 2020
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Ingår i: Journal of Vacuum Science and Technology B. - : AVS Science and Technology Society. - 2166-2746 .- 2166-2754. ; 38:1
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Tidskriftsartikel (refereegranskat)abstract
- Ion sputtering assisted formation of nanopillars is demonstrated as a wafer-scale, lithography-free fabrication method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formation of self-organized ternary nanostructures. Epitaxial (100) Ga0.51In0.49P layers lattice matched to GaAs were sputtered by nitrogen (N2) ions with relatively low ion beam energies (∼400 eV) to reduce ion bombardment induced damage. The influence of process parameters such as temperature, sputter duration, ion beam energy, and ion beam incidence angle on the pillar formation is investigated. The fabricated GaInP nanopillars have average diameters of ∼75-100 nm, height of ∼220 nm, and average density of ∼2-4 × 108 pillars/cm2. The authors show that the ion beam incidence angle plays an important role in pillar formation and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reduction in their average diameters are obtained by varying the ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formation is proposed based on transmission electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.
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