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Träfflista för sökning "WFRF:(Spets H) srt2:(2001)"

Sökning: WFRF:(Spets H) > (2001)

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1.
  • Lloyd-Spets, Anita, et al. (författare)
  • SiC based field effect gas sensors for industrial applications
  • 2001
  • Ingår i: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 185:1, s. 15-25
  • Tidskriftsartikel (refereegranskat)abstract
    • The development and field-testing of high-temperature sensors based on silicon carbide devices have shown promising results in several application areas. Silicon carbide based field-effect sensors can be operated over a large temperature range, 100-600 degreesC, and since silicon carbide is a chemically very inert material these sensors can be used in environments like exhaust gases and flue gases from boilers. The sensors respond to reducing gases like hydrogen, hydrocarbons and carbon monoxide. The use of different temperatures, different catalytic metals and different structures of the gate metal gives selectivity to different gases and arrays of sensors can be used to identify and monitor several components in gas mixtures. MOSFET sensors based on SIC combine the advantage of simple circuitry with a thicker insulator, which increases the long term stability of the devices. In this paper we describe silicon carbide MOSFET sensors and their performance and give: examples of industrial applications such as monitoring of car exhausts and flue gases. Chemometric methods have been used for the evaluation of the data.
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2.
  • Svenningstorp, H., et al. (författare)
  • Detection of HC in exhaust gases by an array of MISiC sensors
  • 2001
  • Ingår i: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 77:1-2, s. 177-185
  • Tidskriftsartikel (refereegranskat)abstract
    • Future legislations for car emissions make direct measurements in exhaust gases of hydrocarbon (HC) as well as CO and NOx interesting. Robust sensors that can stand the high temperature and rough environment in the exhaust gases are needed. Silicon carbide has the advantage of being a chemically very inert material, which, due to its high band gap, is a semiconductor even at temperatures around 800°C. Catalytic metal insulator silicon carbide Schottky diode sensors respond to gases like H2, HC, NOx in exhaust gases. The choice of catalytic metal, structure of the metal, and the operation temperature determines the response pattern to different gases. Here we will demonstrate that an array of different MISiC sensors to some extent predicts the HC concentration in gasoline exhaust gases. Chemometric methods are used for the evaluation of the signals. © 2001 Elsevier Science B.V.
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