| 1. |
- Coletti, C., et al.
(författare)
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Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
- 2007
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 91:6, s. 061914-
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Tidskriftsartikel (refereegranskat)abstract
- Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.
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| 2. |
- Riedl, C., et al.
(författare)
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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
- 2009
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Ingår i: Physical Review Letters. - 1079-7114. ; 103:24
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Tidskriftsartikel (refereegranskat)abstract
- Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.
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| 3. |
- Riedl, C., et al.
(författare)
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Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:3
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the (K) over bar -point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy. (C) 2008 American Institute of Physics.
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| 4. |
- Virojanadara, Chariya, et al.
(författare)
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Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC(1-102): The (2x1) reconstruction
- 2008
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Ingår i: Surface Science. - : Elsevier. - 0039-6028 .- 1879-2758. ; 602:22, s. 3506-3509
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Tidskriftsartikel (refereegranskat)abstract
- The electronic and atomic structure of the 4H-SiC surface was investigated. Photoemission data indicate that the surface contains about 2 Si layers on top of the bulk layers. Scanning tunneling microscopy images show that these adlayers are terminated by an ordered array of adatom chains separated by the unit cell size. An electronic surface state located at a binding energy of 0.8 eV shows one-dimensional confinement with dispersion only along the chains. Based on the experimental observations, a tentative (2 × 1) surface model is derived with the surface terminated by alternating chains of Si adatoms and Si dimers in between.
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