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- Strocov, V. N., et al.
(författare)
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GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study
- 2005
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16:8, s. 1326-1334
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Tidskriftsartikel (refereegranskat)abstract
- GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale.
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| 2. |
- Strocov, V.N., et al.
(författare)
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Momentum selectivity and anisotropy effects in the nitrogen K -edge resonant inelastic x-ray scattering from GaN
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 72:8
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Tidskriftsartikel (refereegranskat)abstract
- High-resolution soft x-ray emission and absorption spectra near the N K -edge of wurtzite GaN are presented. The experimental data are interpreted in terms of full-potential electronic structure calculations. The absorption spectra, compared with calculations including core hole screening, indicate partial core hole screening in the absorption process. The resonantly excited x-ray emission spectra show pronounced dispersion of spectral structures, which is attributed to effects of momentum conservation in the resonant inelastic x-ray scattering (RIXS) process. In development of GaN based optoelectronics, momentum selectivity in RIXS can be utilized to control development of band structure in GaN nanostructures. © 2005 The American Physical Society.
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