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Radiation hardness ...
Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
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- Lebedev, A.A. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Kozlovski, V.V. (författare)
- St. Petersburg State Technical Univ., St. Petersburg 195251, Russian Federation
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- Strokan, N.B. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Davydov, D.V. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Ivanov, A.M. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Strel'chuk, A.M. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ioffe Physicotechnical Institute, Russian Academy of Sciences, St Petersburg 194021, Russian Federation St. Petersburg State Technical Univ., St. Petersburg 195251, Russian Federation (creator_code:org_t)
- Pleiades Publishing Ltd, 2002
- 2002
- Engelska.
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:11, s. 1270-1275
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers - the standard parameter in determining the radiation hardness of a material - depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature). © 2002 MAIK "Nauka/Interperiodica".
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- TECHNOLOGY
- TEKNIKVETENSKAP
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