| 1. |
- Gustafson, Boel, et al.
(författare)
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Coupling between lateral modes in a vertical resonant tunneling structure
- 2002
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - 1386-9477. ; 13:2-4, s. 950-953
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Tidskriftsartikel (refereegranskat)abstract
- We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector
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| 2. |
- Ohki, S, et al.
(författare)
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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
- 2002
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Ingår i: Applied Surface Science. - 1873-5584. ; 190:1-4, s. 288-293
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Tidskriftsartikel (refereegranskat)abstract
- A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 3. |
- Suhara, M, et al.
(författare)
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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
- 2002
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Ingår i: Compound Semiconductors 2001 (Institute of Physics Conference Series). - 0951-3248. ; :170, s. 363-367
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Konferensbidrag (refereegranskat)abstract
- In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].
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| 4. |
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| 5. |
- Suhara, T, et al.
(författare)
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Extrastriatal D2 imaging with PET
- 2004
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Ingår i: BIOLOGICAL PSYCHIATRY. - 0006-3223. ; 55, s. 145S-146S
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 6. |
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