SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES

• This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.

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NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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