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Träfflista för sökning "WFRF:(Svensson V) srt2:(2005-2009)"

Sökning: WFRF:(Svensson V) > (2005-2009)

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1.
  • Bruzzi, M, et al. (författare)
  • Radiation-hard semiconductor detectors for SuperLHC
  • 2005
  • Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
  • Tidskriftsartikel (refereegranskat)abstract
    • An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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2.
  • Aggarwal, M. M., et al. (författare)
  • Pion freeze-out time in Pb plus Pb collisions at 158 AGeV/c studied via pi(-)/pi(+) and K-/K+ ratios
  • 2006
  • Ingår i: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 48:2, s. 343-352
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of the final state Coulomb interaction on particles produced in Pb + Pb collisions at 158AGeV/c has been investigated in the WA98 experiment through the study of the pi(-)/pi(+) and K-/K+ ratios measured as a function of T-m- (m)0. While the ratio for kaons shows no significant T-m dependence, the pi(-)/pi(+) ratio is enhanced at small T-m - (m)0 values with an enhancement that increases with centrality. A silicon pad detector located near the target is used to estimate the contribution of hyperon decays to the pi(-)/pi(+) ratio. The comparison of results with predictions of the RQMD model in which the Coulomb interaction has been incorporated allows to place constraints on the time of the pion freeze-out.
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3.
  • Aggarwal, M. M., et al. (författare)
  • Suppression of high-p(T) neutral pion production in central Pb+Pb collisions at root s(NN)=17.3 GeV relative to p+C and p+Pb collisions
  • 2008
  • Ingår i: Physical Review Letters. - 1079-7114. ; 100:24
  • Tidskriftsartikel (refereegranskat)abstract
    • Neutral pion transverse momentum spectra were measured in p+C and p+Pb collisions at root s(NN) = 17.4 GeV at midrapidity (2.3 less than or similar to eta(lab)less than or similar to 3.0) over the range 0.7 less than or similar to p(T)less than or similar to 3.5 GeV/c. The spectra are compared to pi(0) spectra measured in Pb+Pb collisions at root s(NN) = 17.3 GeV in the same experiment. For a wide range of Pb+Pb centralities (N-part less than or similar to 300), the yield of pi(0)'s with p(T)greater than or similar to 2 GeV/c is larger than or consistent with the p+C or p+Pb yields scaled with the number of nucleon-nucleon collisions (N-coll), while for central Pb+Pb collisions with N-part greater than or similar to 350, the pi(0) yield is suppressed.
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4.
  • Aggarwal, MM, et al. (författare)
  • Centrality and transverse momentum dependence of collective flow in 158 A GeV Pb+Pb collisions measured via inclusive photons
  • 2005
  • Ingår i: Nuclear Physics, Section A. - : Elsevier BV. - 0375-9474. ; 762:1-2, s. 129-146
  • Tidskriftsartikel (refereegranskat)abstract
    • Directed and elliptic flow of inclusive photons near mid-rapidity in 158 A GeV Pb + Pb collisions has been studied. The data have been obtained with the photon spectrometer LEDA of the WA98 experiment at the CERN SPS. The flow strength has been measured for various centralities as a function of p(T) and rapidity over 0. 18 < p(T) < 1.5 GeV/c and 2.3 < y < 2.9. The angular anisotropy has been studied relative to an event plane obtained in the target fragmentation region that shows the elliptic flow to be in-plane. The elliptic flow has also been studied using two-particle correlations and shown to give similar results. A small directed flow component is observed. Both the directed and elliptic flow strengths increase with p(T). The photon flow results are used to estimate the corresponding neutral pion flow.
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5.
  • Aggarwal, M M, et al. (författare)
  • Azimuthal anisotropy of photon and charged particle emission in Pb-208+Pb-208 collisions at 158 center dot A GeV/c
  • 2005
  • Ingår i: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 41:3, s. 287-296
  • Tidskriftsartikel (refereegranskat)abstract
    • The azimuthal distributions of photons and charged particles with respect to the event plane are investigated as a function of centrality in Pb-208 + Pb-208 collisions at 158 (.) A GeV/c in the WA98 experiment at the CERN SPS. The anisotropy of the azimuthal distributions is characterized using a Fourier analysis. For both the photon and charged particle distributions the first two Fourier coefficients are observed to decrease with increasing centrality. The observed anisotropies of the photon distributions compare well with the expectations from the charged particle measurements for all centralities.
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6.
  • Zubkov, V. G., et al. (författare)
  • Structural, vibrational, electronic, and luminescence properties of the cyclotetravanadates A(2)M(VO3)(4) (A=Na,Ag; M=Ca,Sr)
  • 2008
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 77, s. 174113-
  • Tidskriftsartikel (refereegranskat)abstract
    • The physical properties of the family of cyclotetravanadates A(2)M(VO3)(4), where A=Na,Ag and M=Ca,Sr, have been studied by means of x-ray powder diffraction, neutron diffraction, electron diffraction, infrared, Raman, NMR, photoexcitation and pulse cathode beam excitation, and x-ray photoelectron spectroscopies, and band structure calculations. The differences between the structural, vibrational, luminescence, and electronic properties of the alkali metal-containing [Na2Ca(VO3)(4) and Na2Sr(VO3)(4)] and the d metal-containing cyclotetravanadates [Ag2Ca(VO3)(4) and Ag2Sr(VO3)(4)] are analyzed. Na2Ca(VO3)(4), Ag2Ca(VO3)(4), Na2Sr(VO3)(4), and Ag2Sr(VO3)(4) have tetragonal structures, P4/nbm, with a=10.438 49(6), 10.445 24(5), 10.634 49(4), and 10.625 74(6), and c=4.938 73(5), 4.968 45(5), 4.962 05(4), and 4.979 30(4) angstrom, respectively. The main structural feature of A(2)M(VO3)(4) is the tetracyclic [V4O12] units. The hybridized O 2p-V 3d states of the tetracyclic [V4O12] units have a dominant influence on the electronic structure of these compounds. The compounds are semiconducting with a local density approximation band gap increasing, from 1.85 eV for Ag2Ca(VO3)(4) to 3.02 eV for Na2Ca(VO3)(4). The prospects of these compounds as advanced materials for detectors of photon and corpuscular radiation as well as for color correction of light emission sources such as lamp and light emitting diode sources are discussed.
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7.
  • Khranovskyy, V., et al. (författare)
  • Conductivity increase of ZnO : Ga films by rapid thermal annealing
  • 2007
  • Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 42:1-6, s. 379-386
  • Tidskriftsartikel (refereegranskat)abstract
    • Due to a constant increase in demands for transparent electronic devices the search for alternative transparent conducting oxides (TCO) is a major field of research now. New materials should be low-cost and have comparable or better optical and electrical characteristics in comparison to ITO. The use of n-type ZnO was proposed many years ago, but until now the best n-type dopant and its optimal concentration is still under discussion. Ga was proposed as the best dopant for ZnO due to similar atomic radius of Ga3+ compared to Zn2+ and its lower reactivity with oxygen. The resistivity ρ of ZnO:Ga/Si (100) films grown by PEMOCVD was found to be 3×10-2 Ω cm. Rapid thermal annealing (RTA) was applied to increase the conductivity of ZnO:Ga (1 wt%) films and the optimal regime was determined to be 800  {ring operator}C in oxygen media for 35 s. The resistivity ratio ρbefore / ρafter before and after the annealing and the corresponding surface morphologies were investigated. The resistivity reduction (ρbefore / ρafter ≈ 80) was observed after annealing at optimal regime and the final film resistivity was approximately ≈4×10-4 Ω cm, due to effective Ga dopant activation. The route mean square roughness (Rq) of the films was found to decrease with increasing annealing time and the grain size has been found to increase slightly for all annealed samples. These results allow us to prove that highly conductive ZnO films can be obtained by simple post-growth RTA in oxygen using only 1% of Ga precursor in the precursor mix. © 2007 Elsevier Ltd. All rights reserved.
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8.
  • Khranovskyy, V., et al. (författare)
  • Structural and morphological properties of ZnO : Ga thin films
  • 2006
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:2 SPEC. ISS., s. 472-476
  • Tidskriftsartikel (refereegranskat)abstract
    • Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga2(AA)3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p-n device structures. © 2005 Elsevier B.V. All rights reserved.
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9.
  • Litvinov, V V, et al. (författare)
  • Calibration factor for determination of interstitial oxygen concentration in germanium by infrared absorption
  • 2005
  • Ingår i: Solid State Phenomena. - 1012-0394. ; 108-109, s. 735-740
  • Tidskriftsartikel (refereegranskat)abstract
    • Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with O-16 and O-18 isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 510(17) cm(-3) a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm(-1) with a proportionality coefficient C-O = 0.95 10(17) cm(-2). It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 degrees C cannot be described properly with the application of calibration coefficient C-O 510(16) cm(-2), which is widely used for the determination of oxygen concentration in Ge crystals.
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10.
  • Litvinov, V. V., et al. (författare)
  • Determination of interstitial oxygen concentration in germanium by infrared absorption
  • 2006
  • Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 100:3
  • Tidskriftsartikel (refereegranskat)abstract
    • The intensities of infrared absorption due to the asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with O-16 and O-18 isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry. For Ge samples with oxygen content less than 5 x 10(17) cm(-3), a good correlation has been found between the values of oxygen concentration and the values of the absorption coefficient at the maximum of the O-16(i) related absorption band at 855.6 cm(-1) with a proportionality coefficient C-O = 1.05 x 10(17) cm(-2). (c) 2006 American Institute of Physics.
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