Improvements in Realizing 4H-SiC Thermal Neutron Detectors

• In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Ämnesord

MEDICIN OCH HÄLSOVETENSKAP  -- Medicinsk bioteknologi -- Biomaterialvetenskap (hsv//swe)

MEDICAL AND HEALTH SCIENCES  -- Medical Biotechnology -- Biomaterials Science (hsv//eng)

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