| 1. |
- Issa, F., et al.
(author)
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4H-SiC neutron sensors based on ion implanted 10B neutron converter layer
- 2015
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In: 2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, ANIMMA 2015. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479999187
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Conference paper (peer-reviewed)abstract
- In the framework of the I-SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.
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| 2. |
- Issa, F., et al.
(author)
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Improvements in Realizing 4H-SiC Thermal Neutron Detectors
- 2016
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In: ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY. - : EDP Sciences. - 9782759819294
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Conference paper (peer-reviewed)abstract
- In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.
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| 3. |
- Issa, F., et al.
(author)
-
Nuclear radiation detectors based on 4H-SiC p+-n junction
- 2014
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In: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013. - 9783038350101 ; , s. 1046-1049
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Conference paper (peer-reviewed)abstract
- Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
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| 4. |
- Issa, F., et al.
(author)
-
Radiation silicon carbide detectors based on ion implantation of boron
- 2014
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In: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 61:4, s. 2105-2111
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Journal article (peer-reviewed)abstract
- Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I-SMART (Innovative Sensor for Material Ageing and Radiation Testing), we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ - layer, and then implanted by boron ( 10 B) to realize the NCL. The second type was based on p+ - layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.
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| 5. |
- Issa, F., et al.
(author)
-
Radiation silicon carbide detectors based on ion implantation of boron
- 2013
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In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. - : IEEE. - 9781479910472 ; , s. 6727997-
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Conference paper (peer-reviewed)abstract
- Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.
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| 6. |
- Issa, F., et al.
(author)
-
Study of the stability of 4H-SiC detectors by thermal neutron irradiation
- 2015
-
In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014. - : Trans Tech Publications Inc.. - 9783038354789 ; , s. 875-878
-
Conference paper (peer-reviewed)abstract
- Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of10B inside the aluminum metallic contact. The first detector shows a high leakage current after10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection [1,2]
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| 7. |
- Vervisch, V., et al.
(author)
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Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC
- 2013
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In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. - : IEEE. - 9781479910472 ; , s. 6728002-
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Conference paper (peer-reviewed)abstract
- In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power.
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| 8. |
- Vervisch, Vanessa, et al.
(author)
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Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor
- 2014
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In: Materials Research Society Symposium Proceedings. - : Springer Science and Business Media LLC.
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Conference paper (peer-reviewed)abstract
- The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.
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