Measurement of a VPE-transported DFB laser with blue-shifted frequency modulation response from DC to 2 GHz

• The frequency modulation characteristics of a VPE-transported 1.53 mu;m wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a | Delta;f/ Delta;I| of 0.5-1.8 GHz/mA, depending on the biasing level

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Keyword

0 to 2 GHz; 0.7 mW; 1.53 micron; GaInAsP-InP; VPE-transported DFB laser; blue-shifted frequency modulation response; frequency modulation characteristics; modulation frequency range; optical output power; semiconductors; III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; vapour phase epitaxial growth

Publication and Content Type

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art (subject category)