1. |
-
- 2019
-
Tidskriftsartikel (refereegranskat)
|
|
2. |
|
|
3. |
- Song, Lin, et al.
(författare)
-
KIBRA controls exosome secretion via inhibiting the proteasomal degradation of Rab27a
- 2019
-
Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 10
-
Tidskriftsartikel (refereegranskat)abstract
- Exosomes are nanosized membrane vesicles released from cells after fusion of multivesicular bodies (MVBs) with the plasma membrane (PM) and play important roles in intercellular communication and numerous biological processes. However, the molecular mechanisms regulating exosome secretion remain poorly understood. Here we identify KIBRA as an adaptor-like protein that stabilizes Rab27a, which in turn controls exosome secretion both in vitro and in vivo. Knockdown or overexpression of KIBRA in neuronal and podocyte cell lines leads to a decrease or increase of exosome secretion, respectively, and KIBRA depletion increases MVB size and number. Comparing protein profiles between KIBRA knockout and wild-type mouse brain showed significantly decreased Rab27a, a small GTPase that regulates MVB-PM docking. Rab27a is stabilized by interacting with KIBRA, which prevents ubiquitination and degradation via the ubiquitin-proteasome pathway. In conclusion, we show that KIBRA controls exosome secretion via inhibiting the proteasomal degradation of Rab27a.
|
|
4. |
- Zhang, Hongpeng, et al.
(författare)
-
Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal-oxide-semiconductor capacitors
- 2019
-
Ingår i: Journal of Physics D. - : IOP PUBLISHING LTD. - 0022-3727 .- 1361-6463. ; 52:21
-
Tidskriftsartikel (refereegranskat)abstract
- Electrical properties and trapping characteristics of an atomic layer deposited Al-rich HfAlO/beta-Ga2O3 capacitor were evaluated via constant-voltage stress (CVS), capacitance-voltage (C-V), and current-voltage (I-V) measurements. The magnitude of the stress-induced charge trapping increases with increasing voltage and time. The effective charges (N-eff) including the border traps located in near-interface oxide, interface traps (D-it) of HfAlO/beta-Ga2O3 interface, and fixed charges contribute significantly to the observed charge trapping, and it is found that interface traps contribute more under a large stress bias, compared with border traps. In addition, the effective charge density is increased with stress time, implying that the contribution of negative sheet charges during the CVS process might not be negligible. Measurements of oxide permittivity (10.74), interface state density (D-it similar to 1 x 10(12) eV(-1) cm(-2)), and gate leakage current (1.18 x 10( -5) A cm(-2) at +10 V) have been extracted, suggesting the great electrical properties of Al-rich HfAlO/beta-Ga203 MOSCAP. According to the above analysis, Al-rich HfAlO is an attractive candidate for normally off Ga2O3 transistors.
|
|