| 1. |
- Chou, Y. -C., et al.
(författare)
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Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
- 2014
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 343:6168, s. 281-284
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Tidskriftsartikel (refereegranskat)abstract
- In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growing III-V nanowires in a transmission electron microscope, we measured the local kinetics in situ as each atomic plane was added at the catalyst-nanowire growth interface by the vapor-liquid-solid process. During growth of gallium phosphide nanowires at typical V/III ratios, we found surprising fluctuations in growth rate, even under steady growth conditions. We correlated these fluctuations with the formation of twin defects in the nanowire, and found that these variations can be suppressed by switching to growth conditions with a low V/III ratio. We derive a growth model showing that this unexpected variation in local growth kinetics reflects the very different supply pathways of the V and III species. The model explains under which conditions the growth rate can be controlled precisely at the atomic level.
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| 2. |
- Schukfeh, M. I., et al.
(författare)
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Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:46
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Tidskriftsartikel (refereegranskat)abstract
- We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.
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| 3. |
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| 4. |
- Hillerich, Karla, et al.
(författare)
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Strategies To Control Morphology in Hybrid Group III-V/Group IV Heterostructure Nanowires.
- 2013
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:3, s. 903-908
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Tidskriftsartikel (refereegranskat)abstract
- By combining in situ and ex situ transmission electron microscopy measurements, we examine the factors that control the morphology of "hybrid" nanowires that include group III-V and group IV materials. We focus on one materials pair, GaP/Si, for which we use a wide range of growth parameters. We show through video imaging that nanowire morphology depends on growth conditions, but that a general pattern emerges where either single kinks or inclined defects form some distance after the heterointerface. We show that pure Si nanowires can be made to exhibit the same kinks and defects by changing their droplet volume. From this we derive a model where droplet geometry drives growth morphology and discuss optimization strategies. We finally discuss morphology control for material pairs where the second material kinks immediately at the heterointerface and show that an interlayer between segments can enable the growth of unkinked hybrid nanowires.
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| 5. |
- Johannes, A., et al.
(författare)
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Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
- 2014
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Ingår i: Journal of Physics D: Applied Physics. - Bristol : IOP Publishing. - 1361-6463 .- 0022-3727. ; 47:39
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Tidskriftsartikel (refereegranskat)abstract
- We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.
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| 6. |
- Kriegner, Dominik, et al.
(författare)
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Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
- 2011
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:4, s. 1483-1489
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Tidskriftsartikel (refereegranskat)abstract
- The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
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| 7. |
- Kronstrand, Robert, et al.
(författare)
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Fatal intoxications associated with the designer opioid AH-7921
- 2014
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Ingår i: Journal of Analytical Toxicology. - : Oxford University Press. - 0146-4760 .- 1945-2403. ; 38:8, s. 599-604
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Tidskriftsartikel (refereegranskat)abstract
- AH-7921 (3,4-dichloro-N-[(1-dimethylamino) cyclohexylmethyl] benzamide) is a designer opioid with similar to 80% of morphines m-agonist activity. Over a 6-month period, we encountered nine deaths where AH-7921 was involved and detected in blood from the deceased. Shortly after the last death, on August 1 2013, AH-7921 was scheduled as a narcotic and largely disappeared from the illicit market in Sweden. AH-7921 was measured by a selective liquid chromatography- MS-MS method and the concentrations of AH-7921 ranged from 0.03 to 0.99 mu g/g blood. Six of our cases had other drugs of abuse on board and most had other medications such as benzodiazepines, antidepressants and analgesics. However, the other medicinal drugs encountered were present in postmortem therapeutic concentrations and unlikely to have contributed to death. In addition to the parent compound, we identified six possible metabolites where two N-demethylated dominated and four mono-hydroxylated were found in trace amounts in the blood. In conclusion, deaths with AH-7921 seem to occur both at low and high concentrations, probably a result of different tolerance to the drug. Hence, it is reasonable to assume that no sharp dividing line exists between lethal and non-lethal concentrations. Further, poly-drug use did not seem to be a major contributing factor for the fatal outcome.
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| 8. |
- Paschoal Jr., Waldomiro, 1977-, et al.
(författare)
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Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
- 2014
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:15
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. © 2014 AIP Publishing LLC.
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