| 1. |
- Fröjdh, Christer, et al.
(författare)
-
Processing and characterisation of an etched groove Permeable
- 1994
-
Ingår i: Physica scripta. T. - 0281-1847. ; T54, s. 56-59
-
Tidskriftsartikel (refereegranskat)abstract
- The Permeable Base Transistor (PBT) is generally considered as an interesting device for high speed applications. PBTs have been fabricated on Silicon and Gallium Arsenide by a number of groups. In this paper we reported on the fabrication of an etched groove PBT structure on 6H-SiC using Ti as contact metal for all electrodes. The devices have been characterised by DC-measurements. The transistors show the normal IV-characteristics for a such a device except for a parasitic series diode at the drain electrode. The breakdown voltage of the gate-drain diode is generally as high as around 60 V even without passivation of the sidewalls of the grooves.
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
- Ljungberg, K., et al.
(författare)
-
Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding
- 1994
-
Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 141:10, s. 2829-2833
-
Tidskriftsartikel (refereegranskat)abstract
- A buried conductive layer in silicon has been created using wafer bonding technique, with a cobalt interfacial layer.Co-coated silicon wafers were brought into contact with either similar or uncoated wafers at room temperature. CoSi2 wasthen formed through a solid-phase reaction, during an anneal at 700 to 900°C. A 700 Å buried CoSi2-layer, with a resistivityof approximately 21 µ cm, was achieved. Good adhesion, as measured by tensile strength testing, between the wafers wasachieved. Transmission electron microscopic investigations (Co-coated wafer bonded to bare silicon) showed that thesilicide has not grown into the opposite wafer, and that an amorphous layer exists between the silicide and the siliconsurface. The presence of such a layer has been confirmed by electrical characterization.
|
|
| 5. |
|
|
| 6. |
- Thungström, Göran, et al.
(författare)
-
Contacts to Monocrystalline N- and P-type Silicon by Wafer Bonding Using
- 1994
-
Ingår i: Physica scripta. T. - 0281-1847. ; T54, s. 77-80
-
Tidskriftsartikel (refereegranskat)abstract
- Contacts to monocrystalline silicon have been prepared by wafer bonding using cobalt disilicide as an interfacial layer. Bonding has been carried out with three different structures: n+ -CoSi2-n+, p+ -CoSi2-p+ and p+ -CoSi2-n+. The intermediate cobalt disilicide layers had a thickness of either 700 Å or 5250 Å. The bonding interface was characterized by electrical measurement (IV) and Secondary-ion mass spectrometry (SIMS) of the formed contacts. The n+ -CoSi2-n+ and p+ -CoSi2-p+ bondings display an ohmic behaviour. The resistance of the bonded structures was in the range expected for the bulk silicon used (0.1-0.05 Ω cm). The p+ -CoSi2-n+ structures shows a non ohmic behaviour. An evaluation of the SIMS profiles reveals that the non-linear behaviour of the p+ -CoSi2-interface is due to phosphorous diffusion from the n-doped region across the silicide to the p-doped area. It is shown that the phosphorous compensates the boron dopant.
|
|
