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| 2. |
- Bocelli, S, et al.
(author)
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Experimental identification of the optical phonon of CoSi2 in the infrared
- 1995
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In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 91:1-4, s. 30-33
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Journal article (peer-reviewed)abstract
- A weak but clear optical structure was detected at 329 cm−1 by both reflectance and transmittance measurements in the far infrared on a 430 Å film of CoSi2 grown on Si(100). This is the first observation of the IR vibrational mode of the cubic structure of CoSi2 and the result is in very good agreement with theoretical calculations. In order to characterize the sample, the reflectance was extended up to 5.2 × 104 cm−1 and the refractive index was also directly obtained in a more limited spectral range by spectroscopic ellipsometry. The IR structure was then quantitatively analyzed by means of a fit procedure, obtaining the values of ω0 = 327 cm−1 for the phonon energy, of γ = 10.5 cm−1 for the damping parameter and of 0.006 electronic charges for the screened effective ionic charge.
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| 3. |
- Duan, M., et al.
(author)
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Deposition of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray detector applications
- 1998
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In: IEEE Transactions on Nuclear Science. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9499 .- 1558-1578. ; 45:3, s. 525-527
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Journal article (peer-reviewed)abstract
- Bi4Ge3O12 films were deposited by pulsed laser ablation on glass and SiO2/Si substrates. The crystal structures of the films depend on the deposition temperature. XRD patterns indicate that the films deposited at substrate temperature less than 400°C are amorphous. The as deposited amorphous films can be crystallized by post rapid thermal annealing (RTA) in the temperature window from 750°C to 800°C for 2 minutes in a oxygen ambient environment. RBS measurements confirm that the films have the same chemical composition as that of the target. The surface morphology of the films were characterized by atomic force microscopy (AFM)
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| 4. |
- Fröjdh, Christer, et al.
(author)
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Schottky Barriers on 6H-SiC
- 1999
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In: Physica scripta. T. - 0281-1847. ; T79, s. 297-302
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Journal article (peer-reviewed)abstract
- Schottky diodes have been fabricated by deposition of Ti, Ni, Cu on epitaxial layers of p-type and n-type 6H-SiC. The fabricated devices have been characterised by CV, IV and photoelectric measurements. The results from the different characterisations are compared. The effect of incomplete ionisation of dopants and high series resistance on the results from CV-measurements is discussed. In addition to the results obtained from the experiments presented in this paper data has also been collected from other research groups in order to investigate the mechanism of Schottky barrier formation on Silicon Carbide. The results show that for a number of metals the barrier height is strongly correlated to the difference between the electron affinity of the semiconductor and the metal work function, while other metals show significant deviation from the Schottky-Mott theory.
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