| 1. |
- Andersson, Henrik, et al.
(författare)
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Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector
- 2004
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : ELSEVIER SCIENCE BV. - 0168-9002 .- 1872-9576. ; 531:1-2, s. 140-146
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Tidskriftsartikel (refereegranskat)abstract
- Position sensingdetectors (PSDs) are useful in many applications, such as vibration, displacement, and triangulation measurements. In this paper we present a lateral-effect metal oxide semiconductor PSD with switchingcapability fabricated by our group. The detector can be switched off by the application of 0V on the substrate and 0.2V on the gate. A linear current-position behaviour is exhibited by the detector at a substrate bias of both 5 and 10V with the gate at 0V. There is no effect on the linearity when the substrate voltage is changed from 5 to 10V. The non-linearity is within 0.2% at a distance of 71.5mm from origin for 5, 10 and 15mm device length.
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| 2. |
- Bertilsson, Kent, et al.
(författare)
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Simulation of a low atmospheric-noise modified four-quadrant position sensitive detector
- 2001
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 466:1, s. 183-187
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Tidskriftsartikel (refereegranskat)abstract
- A modified four-quadrant position sensitive detector (PSD) is developed. This structure is less sensitive to atmospheric turbulence that is a major drawback with the traditional four-quadrant detector. The inter-electrode resistance is as high as for the four-quadrant detector, which is an advantage compared to the lateral effect PSD. The linearity for the modified four-quadrant detector is good in the whole active range of sensing. The structures are limited to small sensing areas with well focused beams and are suitable for use in detectors up to 1 mm in size.
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| 3. |
- Mattsson, Claes, et al.
(författare)
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Manufacturing and characterization of a modified four-quadrant position sensitive detector for out-door applications
- 2004
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : ELSEVIER SCIENCE BV. - 0168-9002 .- 1872-9576. ; 531:1-2, s. 134-139
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Tidskriftsartikel (refereegranskat)abstract
- Position sensing detectors (PSDs) are useful in many applications such as vibration, displacement and triangulation measurements. In this paper we have constructed a novel structure, which has higher inter-electrode resistance than a lateral effect PSD and is more robust to atmospheric turbulence than a conventional four-quadrant PSD (Nuclear Instruments and Methods in Physics Research A 466 (2001) 183). The detector structure is useful for applications with detector windows less than 0.5 x 0.5 mm(2), but the nonlinearity is the main concern for a detector of that size. Without any corrections for non-linearity the standard deviation of the error is 9 mum (2.2%). Using a simple analytical expression and a 2-d correction-function stored in a look-up table the positioning error is reduced to 6 (1.5%) and 2 (0.5%) mum, respectively.
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| 4. |
- Thungström, Göran, et al.
(författare)
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Processing of silicon UV-photodetectors
- 2001
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 460:1, s. 165-184
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Tidskriftsartikel (refereegranskat)abstract
- UV-enhanced photodetectors of both n+-p and p+-n type have been processed in silicon. Photodetectors of the p+-n type display a responsivity close to the theoretical limit with an antireflective coating of either thermally grown dry silicon dioxide or deposited oxide (TEOS), followed by a short wet oxidizing step. This holds, irrespective of whether the detector window is doped by boron through ion implantation or diffusion from a solid source. However, for p+-n photodiodes with a TEOS-oxide in the as-deposited state the responsivity decreases substantially for wavelenghts below 500 nm compared to the theoretical predictions. This is attributed to a high recombination velocity at the silicon dioxide/silicon interface, as supported by computer simulations of the detector performance. In contrast, n+-p photodiodes are found to be rather insensitive with respect to the properties of the silicon dioxide/silicon interface. These results provide the first experimental demonstration that high built in electric fields, caused by abrupt dopant profiles, can suppress the influence of a high interface carrier recombination velocity.
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