| 1. |
- Ambatipudi, Radhika, 1982-
(författare)
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High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. In this regard, highly integrated planar magnetics are considered as an effective approach compared to the conventional wire wound transformers in modern switch mode power supplies (SMPS). However, as the operating frequency of the transformers increase from several hundred kHz to MHz, numerous problems arise such as skin and proximity effects due to the induced eddy currents in the windings, leakage inductance and unbalanced magnetic flux distribution. In addition to this, the core losses whichare functional dependent on frequency gets elevated as the operating frequency increases. Therefore, this thesis provides an insight towards the problems related to the high frequency magnetics and proposes a solution with regards to different aspects in relation to designing high power density, energy efficient transformers.The first part of the thesis concentrates on the investigation of high power density and highly energy efficient coreless printed circuit board (PCB) step-down transformers useful for stringent height DC-DC converter applications, where the core losses are being completely eliminated. These transformers also maintain the advantages offered by existing core based transformers such as, high coupling coefficient, sufficient input impedance, high energy efficiency and wide frequencyband width with the assistance of a resonant technique. In this regard, several coreless PCB step down transformers of different turn’s ratio for power transfer applications have been designed and evaluated. The designed multilayered coreless PCB transformers for telecom and PoE applications of 8,15 and 30W show that the volume reduction of approximately 40 - 90% is possible when compared to its existing core based counterparts while maintaining the energy efficiency of the transformers in the range of 90 - 97%. The estimation of EMI emissions from the designed transformers for the given power transfer application proves that the amount of radiated EMI from a multilayered transformer is lessthan that of the two layered transformer because of the decreased radius for thesame amount of inductance.The design guidelines for the multilayered coreless PCB step-down transformer for the given power transfer application has been proposed. The designed transformer of 10mm radius has been characterized up to the power level of 50Wand possesses a record power density of 107W/cm3 with a peak energy efficiency of 96%. In addition to this, the design guidelines of the signal transformer fordriving the high side MOSFET in double ended converter topologies have been proposed. The measured power consumption of the high side gate drive circuitvitogether with the designed signal transformer is 0.37W. Both these signal andpower transformers have been successfully implemented in a resonant converter topology in the switching frequency range of 2.4 – 2.75MHz for the maximum load power of 34.5W resulting in the peak energy efficiency of converter as 86.5%.This thesis also investigates the indirect effect of the dielectric laminate on the magnetic field intensity and current density distribution in the planar power transformers with the assistance of finite element analysis (FEA). The significanceof the high frequency dielectric laminate compared to FR-4 laminate in terms of energy efficiency of planar power transformers in MHz frequency region is also explored.The investigations were also conducted on different winding strategies such as conventional solid winding and the parallel winding strategies, which play an important role in the design and development of a high frequency transformer and suggested a better choice in the case of transformers operating in the MHz frequency region.In the second part of the thesis, a novel planar power transformer with hybrid core structure has been designed and evaluated in the MHz frequency region. The design guidelines of the energy efficient high frequency planar power transformerfor the given power transfer application have been proposed. The designed corebased planar transformer has been characterized up to the power level of 50W and possess a power density of 47W/cm3 with maximum energy efficiency of 97%. This transformer has been evaluated successfully in the resonant converter topology within the switching frequency range of 3 – 4.5MHz. The peak energy efficiency ofthe converter is reported to be 92% and the converter has been tested for the maximum power level of 45W, which is suitable for consumer applications such as laptop adapters. In addition to this, a record power density transformer has been designed with a custom made pot core and has been characterized in thefrequency range of 1 - 10MHz. The power density of this custom core transformer operating at 6.78MHz frequency is 67W/cm3 and with the peak energy efficiency of 98%.In conclusion, the research in this dissertation proposed a solution for obtaining high power density converters by designing the highly integrated, high frequency(1 - 10MHz) coreless and core based planar magnetics with energy efficiencies inthe range of 92 - 97%. This solution together with the latest semiconductor GaN/SiC switching devices provides an excellent choice to meet the requirements of the next generation ultra flat low profile switch mode power supplies (SMPS).
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| 2. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
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Design of a multilayered absorber structure based on SU-8 epoxy for broad and efficient absorption inMid-IR sensitive thermal detectors
- 2014
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Ingår i: Proceedings. ; , s. 938-941
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Konferensbidrag (refereegranskat)abstract
- This paper reports on design, simulation and fabrication of a multilayered interferometric absorption structure with a broad absorption in the mid-infrared band. This region is used for IR based CH4 and CO2 detection. The structure consists of five layers of different thickness. The structure consists of one mirror layer of aluminium, two SU-8 epoxy layers and two thin titanium layers. This structure has been fabricated on a silicon substrate and verified for its absorption properties through Fourier transform infrared spectroscopy. The fabricated structure has been compared with simulations are performed using transfer matrix theory. The structure shows more than 90% absorption in the wavelength range of 3.20μm - 5.35μm for simulations and 3.13μm - 5.47μm for FT-IR measurements. The transmission and reflection of SU-8 epoxy was measured using FT-IR (that), resulting in a calculated absorption between 10 - 20% in the area of interest (3μm - 6μm). The use of SU-8 epoxy as dielectric medium, allows for direct integration of the structure into the membrane of a SU-8 membrane based thermopile. The integration results in minimum increase of the thermal capacitance and conductance, which results in maximum detector sensitivity and minimum time constant.
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| 3. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
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Integration of an interferometric IR absorber into an epoxy membrane based CO2 detector
- 2014
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 9:5, s. Art. no. C05035-
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of carbon dioxide levels in the environment are commonly performedby using non-dispersive infrared technology (NDIR). Thermopile detectors are often used in NDIRsystems because of their non-cooling advantages. The infrared absorber has a major influence onthe detector responsivity. In this paper, the fabrication of a SU-8 epoxy membrane based Al/Bithermopile detector and the integration of an interferometric infrared absorber structure of wavelength around 4 µ m into the detector is reported. The membrane of thermopile detector has beenutilized as a dielectric medium in an interferometric absorption structure. By doing so, a reduction in both thermal conductance and capacitance is achieved. In the fabrication of the thermopile,metal evaporation and lift off process had been used for the deposition of serially interconnectedAl/Bi thermocouples. Serial resistance of fabricated thermopile was measured as 220 kΩ. Theresponse of fabricated thermopile detector was measured using a visible to infrared source of radiation flux 3.23 mW mm−2. The radiation incident on the detector was limited using a band passfilter of wavelength 4.26 µ m in front of the detector. A responsivity of 27.86 V mm2W−1at roomtemperature was achieved using this setup. The fabricated detector was compared to a referencedetector with a broad band absorber. From the comparison it was concluded that the integratedinterferometric absorber is functioning correctly.
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| 4. |
- Esebamen, Omeime, et al.
(författare)
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Surface State Effects on N+P Doped Electron Detector
- 2011
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 6:12, s. Art. no. C12019-
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Tidskriftsartikel (refereegranskat)abstract
- Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocityVs, there is no visible effect with respect tofixed oxide chargeQfotherwise known as interface fixed charge density.
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| 5. |
- Esebamen, Omeime Xerviar, et al.
(författare)
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A Different Approach of Determining the Responsivity of n+p Detectors Using Scanning Electron Microscopy
- 2012
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Ingår i: Journal of semiconductors. - : IOP Publishing. - 1674-4926. ; 33:7, s. 074002-
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Tidskriftsartikel (refereegranskat)abstract
- This paper explores an alternative to the standard method of studying the responsivities (the input—output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.
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| 6. |
- Esebamen, Omeime Xerviar
(författare)
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Characterization of interface states & radiation damage effects in duo-lateral PSDs : Using SEM microscopy and UV beam profiling techniques
- 2014
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- There has been an increase in the use of duo‐lateral position sensitive detectors inpractically every radiation and beam detection application. These devices unlike other light detection system utilize the effect of the lateral division of the generated photocurrent to measure the position of the integral focus of an incoming lightsignal. The performance of a PSD is impaired or strengthened by a number of events caused by parameters such as interface states and recombination introduced during the fabrication of the detector and/or its absorption of ionizing particles. This thesis show the results from the successful implementation of alternative characterization methods of these effects and parameters using scanning electronmicroscopy and UV beam profiling techniques on duo‐lateral position sensitive detectors (LPSDs). To help create the groundwork for the research content of this thesis, different technical reviews of previous studies on interface states, surface recombination velocity and radiation damage due to continuous absorption of ionizing irradiation on detectors are investigated. The thesis also examines published theoretical and measurement techniques used to characterize these surface/interface phenomena. The PSDs used in this research were developed using silicon technology and the various methodologies put into the fabrication of the detectors (n+p and p+n structures) were fashioned after the simulated models. The various steps associated with the clean room fabrication and the prior simulation steps are highlighted in the content of the thesis. Also discussed are the measurement techniques used incharacterizing the fixed oxide charge, surface recombination and the position deviation error of the LPSDs in a high vacuum environment of a scanning electron microscope SEM chamber. Using this method, the effects of interface states and surface recombination velocity on the responsivity of differently doped LPSDs were investigated. By lithographically patterning grid‐like structures used as scaleon n+p doped LPSD and using sweeping electrons from the SEM microscope, a very high linearity over the two‐dimensions of the LPSD total active area was observed. An improved responsivity for low energetic electrons was also achievedby the introduced n+p structure. The lithographically patterned grids helped eliminate further external measurement errors and uncertainties from the use of other typical movable measurement devices such as actuators and two dimensional adjusters which would normally be difficult to install in a remote vacuum chamber. In a similar vein, field plate and field rings were patterned around an array ofthe PSDs used as pixel detector(s). By studying the interpixel resistance and breakdown characteristics, the most effective structural arrangement of the field plate and field rings used to curb induced inversion channel between the n+ doped regions of the pixel‐detector is observed. By using UV beam profiling after the irradiation of UV (193 nm or 253 nm) beam on n+p and p+n doped PSDs, the degree of radiation damage was also investigated. The results obtained help to illustrate how prolonged UV radiation can impact on the linearity and the position deviation/error of UV detectors. The results in this thesis are most relevant in spectroscopic and microscopic applications where low energy electrons and medium UV (MUV) radiation are used.
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| 7. |
- Esebamen, Omeime Xerviar, et al.
(författare)
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Comparative Study of UV Radiation Hardness of n+p and p+n Duo-Lateral Position Sensitive Detectors
- 2014
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Ingår i: European Physical Journal. - : EDP Sciences. - 1286-0042 .- 1286-0050. ; 68:2, s. Art. no. 21301-
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Tidskriftsartikel (refereegranskat)abstract
- We report experimental results on the degree of radiation damage in two duo-lateral position sensitive detectors (LPSDs) exposed to 193 nm and253 nm ultraviolet (UV) beam. One of the detectors was an in-house fabricated n(+) p LPSD and the other was a commercially available p(+) n LPSD. We report that at both wavelengths, the degradation damage from the UV photons absorption caused a much more significant deterioration in responsivity in the p(+) n LPSD than in the n(+) p LPSD. By employing a simple method, we were able to visualize the radiation damage on the active area of the LPSDs using 3-dimensional graphs. We were also able to characterize the impact of radiation damage on the linearity and position error of the detectors.
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| 8. |
- Esebamen, Omeime Xerviar, et al.
(författare)
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Gridded Duo-lateral Position Sensitivity Detector with High Linearity to Low Energetic Electrons in Vacuum Environment
- 2014
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Ingår i: IET Optoelectronics. - : Institution of Engineering and Technology (IET). - 1751-8768 .- 1751-8776. ; 8:6, s. 217-225
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Tidskriftsartikel (refereegranskat)abstract
- Characterizing a position sensitive detector in a vacuum environment without beam position monitoring devices can bechallenging and expensive. With this in mind, we have designed and fabricated a duo-lateral position sensitive detector (PSD) incorporatedwith simple and inexpensive surface features. It was evaluated using scanning electron microscopy. To assist in pinpointing precise positioningas well as acting as path guide during the sweeping of electrons, multiple grids were lithographically patterned on the top layer of the duolateralPSD. By sweeping electrons along two axes of the detector, the position detection error of both axes was determined from the signalsrecorded using a transimpedance amplification circuit. We were able to characterize the linearity over the x- and y-axis of the PSD and theresults show a very high linearity over two-dimensions of the PSD’s active area and that accurate beam monitoring for spectroscopic measurement without additional beam position monitoring devices is possible.
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| 9. |
- Esebamen, Omeime X., et al.
(författare)
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High resolution, low energy electron detector
- 2011
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 6:1, s. Art. no. P01001-
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Tidskriftsartikel (refereegranskat)abstract
- Electron detection at low energy range for scanning electron microscope (SEM), electron capture detector and electron probe micro-analysis (EPMA) applications, require detectors with high sensitivity and accuracy for low energy range. Such detectors must therefore have a thin entrance window and low recombination at the Si-SiO2 interface. An electron detector with 100 photons to electron-hole pair production rate having a 10 nm SiO2 passivating layer reveals a responsivity of approximately 0.25 A/W when irradiated. Simulations results showing the responsivity of electron interaction between detectors of varied interface fixed oxide charge density Qf show that there is an appreciable difference with the responsivity of a p +n detector and that of an n+p. The simulation results also show the significance of the effect of the minority carriers transport velocity Sn,p on the responsivity of the detector. © 2011 IOP Publishing Ltd and SISSA.
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| 10. |
- Esebamen, Omeime Xerviar
(författare)
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Simulation, Measurement and Analysis of the Response of Electron- and Position Sensitive Detector
- 2012
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Different methods exist in relation to probing and investigating thephysical and structural composition of materials especially detectors whoseusage have become an integral part of radiation detection. The use of thescanning electron microscopy is just one of such exploratory methods. Thistechnique uses a focused beam of high-energy electrons to generate a varietyof signals at the surface of the device under investigationThis thesis presents the results derived from signals from electron beamsampleinteractions, revealing information about the different cleanroomfabricated electron detectors used. This information includes the detector’sexternal morphology and texture, surface recombination, fixed oxide chargeand the behavioral characteristic in the form of its position detection accuracyand linearity.An electron detector with a high ionization factor and which has a 10nmSilicon Oxide passivating layer was fabricated. Results from using the scanningelectron microscopy showed that its maximum responsivity wasapproximately 0.25 A/W from a possible 0.27 A/W. In conjunction withsimulations, results also showed the significance of the effect of the minoritycarrier's surface recombination velocity on the responsivity of the detectors.In addition, measurements were conducted to ascertain the performancevariance of these electron detectors with respect to their surfacerecombination velocity and fixed oxide charge when the doping profile isaltered.By incorporating special features on a fabricated duo-lateral positionsensitive detector (PSD), a position sensing resolution of the PSD using theelectron microscopic method was also evaluated. The evaluation showed avery high linearity over two-dimensions for 77% of the PSD’s active area.The results in this thesis offer a significant improvement in electrondetectors for applications such as gas chromatography detection of traceamounts of chemical compounds in a sample as well as applications involvingposition sensitive detection.
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