| 1. |
- Aggerstam, Thomas, et al.
(författare)
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GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption
- 2007
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Ingår i: Quantum Sensing and Nanophotonic Devices IV. - : SPIE. - 9780819465924 ; 6479, s. 64791E-
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Konferensbidrag (refereegranskat)abstract
- We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.
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| 2. |
- Akram, Nadeem, 1971-
(författare)
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Photonic devices with MQW active material and waveguide gratings : modelling and characterisation
- 2005
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). The basic three-point central-di erence approximation of the δ2=δx2 operator used in the Helmholtz equation is extended to a new ve-point and seven-point approximation with appropriate interface conditions for the TE and TM elds. Di erent structures such as a high-contrast waveguide and a TM surface plasmon mode waveguide are simulated, and improved numerical accuracy for calculating the optical mode and propagation constant is demonstrated. A new fast and stable non-paraxial bi-directional beam propagation method, called Cascading and Doubling algorithm, is derived to model deep gratings with many periods. This algorithm is applied to model a quasi-guided multi-layer anti-resonant reecting optical waveguide (ARROW) grating polarizing structure. In the second part of the thesis, our focus is on active optical devices such as vertical-cavity and edge-emitting lasers. With a view to improve the bandwidth of directly modulated laser, an InGaAsP quantum well with InGaAlAs barrier is studied due to its favorable band o set for hole injection as well as for electron con nement. Quantum wells with di erent barrier bandgap are grown and direct carrier transport measurements are done using time and wavelength resolved photoluminescence upconversion. Semi-insulating regrown Fabry-Perot lasers are manufactured and experimentally evaluated for light-current, optical gain, chirp and small-signal performance. It is shown that the lasers having MQW with shallow bandgap InGaAlAs barrier have improved carrier transport properties, better T0, higher di erential gain and lower chirp. For lateral current injection laser scheme, it is shown that a narrow mesa is important for gain uniformity across the active region. High speed directly modulated DBR lasers are evaluated for analog performance and a record high spurious free dynamic range of 103 dB Hz2=3 for frequencies in the range of 1-19 GHz is demonstrated. Large signal transmission experiment is performed at 40 Gb/s and error free transmission for back-to-back and through 1 km standard single mode ber is achieved.
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| 3. |
- Andersson, Thorvald, 1946, et al.
(författare)
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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates
- 2009
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 40:2, s. 360-362
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Tidskriftsartikel (refereegranskat)abstract
- We have used MBE to grow in AlN/GaN superlattices, with different number of periods, on 2.5-mu m-thick MOVPE-GaN templates to study the development of defects such as surface deformation due to strain. After growth the samples were studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), XRD and Fourier transform infrared spectroscopy (FT-IR). The strain increased with the number of quantum wells (QWs) and eventually caused defects such as microcracks visible by optical microscopy at four or more QW periods. High-resolution TEM images showed shallow recessions on the surface (surface deformation) indicating formation of microcracks in the MQW region. The measured intersubband (IS) absorption linewidth from a four period structure was 97 meV, which is comparable with the spectrum from a 10 period structure at an absorption energy of similar to 700 meV. This indicates that the interface quality of the MQW is not substantially affected by the presence of cracks.
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| 4. |
- Berglind, Eilert, et al.
(författare)
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Microwave engineering approach to metallic based photonic waveguides and waveguide components
- 2006
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Ingår i: Proceedings of International Symposium on Biophotonics, Nanophotonics and Metamaterials. - 9780780397736 ; , s. 247-251
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Konferensbidrag (refereegranskat)abstract
- Approaches from microwave engineering are used to analyze metallic waveguides and wave-guiding circuits and to point out the usefulness of these techniques in photonics applications, for design of components and to achieve higher densities of integration in integrated photonics circuits than is the case today. It is also find that the losses are severe for certain applications.
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| 5. |
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| 6. |
- Bratkovsky, A. M., et al.
(författare)
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Properties of nanostructured metamaterials at optical frequencies
- 2008
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Konferensbidrag (refereegranskat)abstract
- A variety of metamaterials has been demonstrated recently that support backward waves and negative refraction (Negative Index Materials, NIM.) In particular, these materials enable sub-wavelength resolution that makes them even more interesting, especially in optical domain rather than at microwave frequencies where their unusual properties were known for decades. We describe below theoretical and experimental studies of the so-called 'fishnet' metal-spacer holearray metamaterials, which exhibit NIM behavior at optical frequencies, having unit cell size of a few 100s nm. We demonstrate experimentally that their refractive index can be modulated very fast and very strongly (from -2.4 to -1.5) around the communication wavelength of =1.55 um, in good agreement with the FDTD results. We also discuss a problem of loss compensation in those materials with hefty Ohmic losses by using gain media and local field enhancement in metallic nanoparticles ensembles that enable SERS.
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| 7. |
- Chacinski, Marek, et al.
(författare)
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50 Gb/s modulation and/or detection with a travelling-wave electro-absorption transceiver
- 2008
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Ingår i: 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference. - 9781557528568 ; , s. 94-96
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Konferensbidrag (refereegranskat)abstract
- Electro-Absorption-Transceiver (EAT) structures used as efficient Travelling-Wave Electro-Absorption-Modulator (TWEAM) as well as Travelling-Wave-Photo-Detector (TWPD) are investigated. Clear eye-openings at 50Gb/s for modulation and for detection are presented. Transmission over 2.2km and 5km SSMF were achieved.
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| 8. |
- Chacinski, Marek, et al.
(författare)
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Electroabsorption Modulators Suitable for 100-Gb/s Ethernet
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:9, s. 1014-1016
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Tidskriftsartikel (refereegranskat)abstract
- The design of a traveling-wave electroabsorption modulator (TWEAM) has been improved to decrease the drive voltage. The absorption layer was optimized and together with a novel segmentation of microwave design was introduced to increase the active modulator length. The resulting -3-dBe bandwidth of fabricated devices was estimated to be 99 GHz. Extinction ratios of 10 dB back-to-back and 6.7 dB after transmission over 2.2-km long fiber were measured with an incident drive voltage of only 2 V peak to peak. This TWEAM performance is believed to constitute a new state of the art for modulators suitable for 100-Gb/s Ethernet with on-off keying.
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| 9. |
- Chacinski, Marek, et al.
(författare)
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Monolithically Integrated 100 GHz DFB-TWEAM
- 2009
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 7:16, s. 3410-3415
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Tidskriftsartikel (refereegranskat)abstract
- A monolithically integrated distributed feedback (DFB) laser and traveling-wave electro-absorption modulator (TWEAM) with >= 100 GHz -dBe bandwidth suitable for Non-return-to-zero (NRZ) operation with on-off keying (OOK) is presented. The steady-state, small-signal modulation response, microwave reflection, chirp characteristic, and both data operation and transmission were investigated. The DFB-TWEAM was found to be an attractive candidate for future short distance communication in high bitrates systems.
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| 10. |
- Chacinski, Marek, et al.
(författare)
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Monolithically Integrated DFB-EA for 100 Gb/s Ethernet
- 2008
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 29:12, s. 1312-1314
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Tidskriftsartikel (refereegranskat)abstract
- The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected >= 100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mu m resulting in similar to 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.
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