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Träfflista för sökning "WFRF:(Trinh Thang) srt2:(2012)"

Sökning: WFRF:(Trinh Thang) > (2012)

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1.
  • Son Tien, Nguyen, et al. (författare)
  • Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
  • 2012
  • Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 112:8, s. 083711-
  • Tidskriftsartikel (refereegranskat)abstract
    • High purity silicon carbide (SiC) materials are of interest from high-power high temperature applications across recent photo-voltaic cells to hosting solid state quantum bits, where the tight control of electrically, optically, and magnetically active point defects is pivotal in these areas. 4H- and 6H-SiC substrates are grown at high temperatures and the incorporation of transition metal impurities is common. In unintentionally Nb-doped 4H- and 6H-SiC substrates grown by high-temperature chemical vapor deposition, an electron paramagnetic resonance (EPR) spectrum with C-1h symmetry and a clear hyperfine (hf) structure consisting of ten equal intensity hf lines was observed. The hf structure can be identified as due to the interaction between the electron spin S - 1/2 and the nuclear spin of Nb-93. Additional hf structures due to the interaction with three Si neighbors were also detected. In 4H-SiC, a considerable spin density of similar to 37.4% was found on three Si neighbors, suggesting the defect to be a complex between Nb and a nearby carbon vacancy (V-C). Calculations of the Nb-93 and Si-29 hf constants of the neutral Nb on Si site, Nb-Si(0), and the Nb-vacancy defect, NbSiVC0, support previous reported results that Nb preferentially forms an asymmetric split-vacancy (ASV) defect. In both 4H- and 6H-SiC, only one Nb-related EPR spectrum has been observed, supporting the prediction from calculations that the hexagonal-hexagonal defect configuration of the ASV complex is more stable than others.
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2.
  • Tien Son, Nguyen, et al. (författare)
  • Negative-U System of Carbon Vacancy in 4H-SiC
  • 2012
  • Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 109:18, s. 187603-
  • Tidskriftsartikel (refereegranskat)abstract
    • Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.
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