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- Dermenci, K.B., et al.
(författare)
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Effect of cathode slurry composition on the electrochemical properties of Li-ion batteries
- 2015
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Ingår i: ECS Transactions. - 1938-5862 .- 1938-6737. ; 66:9, s. 285-293
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Tidskriftsartikel (refereegranskat)abstract
- The performance difference between commercial and laboratory scale cells remains a problem to be solved. Different way of battery electrode preparation is considered to be the main reason underlying various battery performance. In this work, the effect of slurry composition on electrochemical properties of Li-ion batteries is reported. Slurry preparation with various compositions of LiFePO4 active material (76-88%), PVdF binder (6-12%) and Super P Carbon conductive additive (6-12%) has been studied. Charge-discharge curves and capacity fade of electrodes are also investigated. Selected electrodes were pressed in order to see the effect of pressing on the final performance. Results showed that varying PVdF and carbon content mainly effects charge-discharge characteristics. For unpressed samples, higher amount of PVdF and carbon could result higher maximum specific capacity and lower internal resistance during lithiation and delithiation of positive electrode. Pressing reduces the distance between slurry particles, which enhances the conductivity of the prepared cell.
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- Noroozi, Mohammad, 1979-
(författare)
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Growth, processing and characterization of group IV materials for thermoelectric applications
- 2016
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Discover of new energy sources and solutions are one of the important global issues nowadays, which has a big impact on economy as well as environment. One of the methods to help to mitigate this issue is to recover wasted heat, which is produced in large quantities by the industry, through vehicle exhausts and in many other situations where we consume energy. One way to do this would be using thermoelectric (TE) materials, which enable direct interconversion between heat and electrical energy. This thesis investigates how the novel material combinations and nanotechnology could be used for fabricating more efficient TE materials and devices.The work presents synthesis, processing, and electrical characterization of group IV materials for TE applications. The starting point is epitaxial growth of alloys of group IV elements, silicon (Si), germanium (Ge) and tin (Sn), with a focus on SiGe and GeSn(Si) alloys. The material development is performed using chemical vapor deposition (CVD) technique. Strained and strain-relaxed Ge1-x Snx (0.01≤x≤0.15) has been successfully grown on Ge buffer and Si substrate, respectively. It is demonstrated that a precise control of temperature, growth rate, Sn flow and buffer layer quality is necessary to overcome Sn segregation and achieve a high quality GeSn layer. The incorporation of Si and n- and p-type dopant atoms is also investigated and it was found that the strain can be compensated in the presence of Si and dopant atoms. Si1-xGexlayers are grown on Si-on-insulator wafers and condensed by oxidation at 1050 ᵒC to manufacture SiGe-on-insulator (SGOI) wafers. Nanowires (NWs) are processed, either by sidewall transfer lithography (STL), or by using conventional lithography, and subsequently manufactured into nanoscale dimensions by focused ion beam (FIB) technique. The NWs are formed in an array, where one side is heated by a resistive heater made of Ti/Pt. The power factor of NWs is measured and the results are compared for NWs manufactured by different methods. It is found that the electrical properties of NWs fabricated with FIB technique can be influenced due to Ga doping during ion milling.Finally, the carrier transport in SiGe NWs formed on SGOI samples is tailored by applying a back-gate voltage on the Si substrate. In this way, the power factor is improved by a factor of 4. This improvement is related to the presence of defects and/or small fluctuation of nanowire shape and Ge content along the NWs, generated during processing and condensation of SiGe layers. The SiGe results open a new window for operation of SiGe NWs-based TE devices in the new temperature range of 250 to 450 K.
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