| 1. |
- Ahlers, F.J., et al.
(författare)
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The EMRP project GraphOhm- Towards quantum resistance metrology based on graphene
- 2014
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Ingår i: CPEM Digest (Conference on Precision Electromagnetic Measurements). - 0589-1485. - 9781479952052 ; , s. 548-549, s. 548-549
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Konferensbidrag (refereegranskat)abstract
- A new joint research project (JRP) integrating metrology institutes and universities from nine countries is aimed at realization of a new generation of standards for quantum resistance metrology. The project exploits graphene's properties to simplify operation of standards without compromising the unprecedented precision delivered by semiconductor quantum Hall devices. Higher operating temperatures (above 4.2 K, and up to 8 K) and together with lower magnetic fields (below 5 T, and potentially down to 2 T) will lead to a significantly improved and cost-saving dissemination of intrinsically referenced resistance standards to all end-users relying on electrical measurements.
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| 2. |
- Burnett, J., et al.
(författare)
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PC2: Identifying noise processes in superconducting resonators
- 2013
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Ingår i: 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013. - 9781467363716 ; , s. Art. no. 6604284-
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Konferensbidrag (refereegranskat)abstract
- Extensive studies of dielectric loss due to two level fluctuators (TLFs) in superconducting resonators have provided routes for low loss resonators. The research is motivated not only by the use of resonators as detectors and in quantum information processing, but more generally due to TLFs being a source of noise and decoherence in all quantum devices. In this work a frequency locked loop was used to measure frequency fluctuations at timescales in excess of 104 seconds, thereby accurately probing the TLF induced low- frequency noise of the resonator. Our measurement method lead to very high statistical confidence even for very long timescales, and here we can therefore present results explicitly identifying power dependent flicker frequency noise (S = 1/fa where a=1) persisting down to the mHz level.
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| 3. |
- Chua, C., et al.
(författare)
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- 2014
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:6, s. 3369-3373
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Tidskriftsartikel (refereegranskat)abstract
- We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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| 4. |
- Janssen, Tjbm, et al.
(författare)
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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- 2011
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 83:23, s. 233402-
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Tidskriftsartikel (refereegranskat)abstract
- We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.
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| 5. |
- Janssen, Tjbm, et al.
(författare)
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Breakdown of the quantum Hall effect in graphene
- 2012
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Ingår i: CPEM Digest (Conference on Precision Electromagnetic Measurements). - 0589-1485. - 9781467304399 ; , s. 510-511
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Konferensbidrag (refereegranskat)abstract
- We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
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| 6. |
- Janssen, Tjbm, et al.
(författare)
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Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
- 2013
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Ingår i: Mapan - Journal of Metrology Society of India. - : Springer Science and Business Media LLC. - 0970-3950 .- 0974-9853. ; 28:4, s. 239-250
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Forskningsöversikt (refereegranskat)abstract
- The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.
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| 7. |
- Kopylov, S., et al.
(författare)
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Charge transfer between epitaxial graphene and silicon carbide
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:11
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Tidskriftsartikel (refereegranskat)abstract
- We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.
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| 8. |
- Lara Avila, Samuel, 1983, et al.
(författare)
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Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
- 2011
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 23:7, s. 878-
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Tidskriftsartikel (refereegranskat)abstract
- A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
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| 9. |
- Panchal, V., et al.
(författare)
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Surface potential variations in epitaxial graphene devices investigated by Electrostatic Force Spectroscopy
- 2012
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Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - : IEEE. - 1944-9399 .- 1944-9380. - 9781467321983
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Konferensbidrag (refereegranskat)abstract
- Electrostatic Force Spectroscopy and Scanning Kelvin Probe Microscopy techniques are used to study the performance of side-gated Hall devices made of epitaxial graphene on 4H-SiC(0001). Electrostatic Force Spectroscopy is a novel method which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we calibrate work function of the metal coated tip and define the work functions for single and double-layer graphene. We also show that the use of moderate strength electrical fields in the side-gate geometry does not notably change the performance of the device.
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| 10. |
- Panchal, V., et al.
(författare)
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Visualisation of edge effects in side-gated graphene nanodevices
- 2014
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 4
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Tidskriftsartikel (refereegranskat)abstract
- Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.
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