| 1. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
-
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
- 2010
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : The American Physical Society. - 1098-0121 .- 1550-235X. ; 81, s. 115334-
-
Tidskriftsartikel (refereegranskat)abstract
- Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I = ½) of a 31P atom. The principal axis of the defect is concluded to be along a <111> crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom (either a PGa antisite or a Pi interstitial) and its partner in the complex defect to be oriented along this direction. The principal values of the electronic g-tensor and hyperfine interaction tensor are determined as: g┴=2.013, g║=2.002, and A┴=130´10-4 cm-1, A║=330´10-4 cm-1, respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under non-equilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing.
|
|
| 2. |
- Dagnelund, Daniel, et al.
(författare)
-
Phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
- 2010
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- For full exploration of dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving e.g. Ga(In)NP are required. In this work we report on the first identification of a point defect situated at an interface between two semiconductors: GaNP and GaP. The defect is concluded to be a complex involving a P antisite or a P interstitial in its core, partnered with a neighboring impurity/defect aligned along a <111> direction, from detailed angular dependence studies of the optically detected magnetic resonance (ODMR) spectra at both X- and Q-band microwave frequencies. The principal g and A values, g┴=2.013, g║=2.002, A┴=130x10-4 cm-1 and A║=330x10-4 cm-1, are obtained from a spin Hamiltonian analysis. The interface nature of the defect is clearly evident from the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by severe nitrogen ion bombardment under non-equilibrium growth conditions during solid-source molecular beam epitaxy and the defect is thermally stable upon post-growth thermal annealing.
|
|
