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Träfflista för sökning "WFRF:(Vannini G) srt2:(2010-2014)"

Sökning: WFRF:(Vannini G) > (2010-2014)

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1.
  • Schael, S., et al. (författare)
  • Electroweak measurements in electron positron collisions at W-boson-pair energies at LEP
  • 2013
  • Ingår i: Physics Reports. - : Elsevier BV. - 0370-1573 .- 1873-6270. ; 532:4, s. 119-244
  • Forskningsöversikt (refereegranskat)abstract
    • Electroweak measurements performed with data taken at the electron positron collider LEP at CERN from 1995 to 2000 are reported. The combined data set considered in this report corresponds to a total luminosity of about 3 fb(-1) collected by the four LEP experiments ALEPH, DELPHI, 13 and OPAL, at centre-of-mass energies ranging from 130 GeV to 209 GeV. Combining the published results of the four LEP experiments, the measurements include total and differential cross-sections in photon-pair, fermion-pair and four-fermion production, the latter resulting from both double-resonant WW and ZZ production as well as singly resonant production. Total and differential cross-sections are measured precisely, providing a stringent test of the Standard Model at centre-of-mass energies never explored before in electron positron collisions. Final-state interaction effects in four-fermion production, such as those arising from colour reconnection and Bose Einstein correlations between the two W decay systems arising in WW production, are searched for and upper limits on the strength of possible effects are obtained. The data are used to determine fundamental properties of the W boson and the electroweak theory. Among others, the mass and width of the W boson, m(w) and Gamma(w), the branching fraction of W decays to hadrons, B(W -> had), and the trilinear gauge-boson self-couplings g(1)(Z), K-gamma and lambda(gamma), are determined to be: m(w) = 80.376 +/- 0.033 GeV Gamma(w) = 2.195 +/- 0.083 GeV B(W -> had) = 67.41 +/- 0.27% g(1)(Z) = 0.984(-0.020)(+0.018) K-gamma - 0.982 +/- 0.042 lambda(gamma) = 0.022 +/- 0.019. (C) 2013 Elsevier B.V. All rights reserved.
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2.
  • Tarrío, Diego, et al. (författare)
  • Fission Fragment Angular Distribution of Th-232(n,f) at the CERN n_TOF Facility
  • 2014
  • Ingår i: Nuclear Data Sheets. - Univ Santiago de Compostela, Santiago De Compostela, Spain. [Leong, L. S.; Audouin, L.; Tassan-Got, L.; Lederer, C.] IPN, CNRS, IN2P3, Orsay, France. [Altstadt, S.; Langer, C.; Lederer, C.; Reifarth, R.; Schmidt, S.; Weigand, M.] Goethe Univ Frankfurt, D-60054 Frankfurt, Germany. [Andrzejewski, J.; Marganiec, J.; Perkowski, J.] Univ Lodz, PL-90131 Lodz, Poland. [Barbagallo, M.; Colonna, N.; Mastromarco, M.; Meaze, M.; Tagliente, G.; Variale, V.] Ist Nazl Fis Nucl, I-70126 Bari, Italy. [Becares, V.; Cano-Ott, D.; Garcia, A. R.; Gonzalez-Romero, E.; Martinez, T.; Mendoza, E.] CIEMAT, E-28040 Madrid, Spain. [Becvar, F.; Krticka, M.; Kroll, J.; Valenta, S.] Charles Univ Prague, Prague, Czech Republic. [Belloni, F.; Berthoumieux, E.; Bosnar, D.; Chiaveri, E.; Fraval, K.; Gunsing, F.] CEA Saclay, Irfu, F-91191 Gif Sur Yvette, France. [Berthoumieux, E.; Boccone, V.; Bosnar, D.; Brugger, M.; Calviani, M.; Cerutti, F.; Chiaveri, E.; Chin, M.; Ferrari, A.; Guerrero, C.; Kadi, Y.; Losito, R.; Roman, F.; Rubbia, C.; Tsinganis, A.; Versaci, R.; Vlachoudis, V.] CERN, European Org Nucl Res, CH-1211 Geneva, Switzerland. [Billowes, J.; Ware, T.; Wright, T. J.] Univ Manchester, Manchester, Lancs, England. [Zugec, P.] Univ Zagreb, Fac Sci, Dept Phys, Zagreb 41000, Croatia. [Calvino, F.; Cortes, G.; Gomez-Hornillos, M. B.; Riego, A.] Univ Politecn Cataluna, Barcelona, Spain. [Carrapico, C.; Goncalves, I. F.; Sarmento, R.; Vaz, P.] Univ Tecn Lisboa, Inst Super Tecn, Inst Tecnol Nucl, P-1096 Lisbon, Portugal. [Cortes-Giraldo, M. A.; Praena, J.; Quesada, J. M.] Univ Seville, Seville, Spain. [Diakaki, M.; Karadimos, D.; Kokkoris, M.; Vlastou, R.] Natl Tech Univ Athens, GR-10682 Athens, Greece. [Domingo-Pardo, C.; Giubrone, G.; Tain, J. L.] Univ Valencia, CSIC, Inst Fis Corpuscular, E-46003 Valencia, Spain. [Dzysiuk, N.; Mastinu, P. F.] Ist Nazl Fis Nucl, Lab Nazl Legnaro, Milan, Italy. [Eleftheriadis, C.; Manousos, A.] Aristotle Univ Thessaloniki, GR-54006 Thessaloniki, Greece. [Ganesan, S.; Gurusamy, P.] Bhabha Atom Res Ctr, Bombay 400085, Maharashtra, India. [Griesmayer, E.; Jericha, E.; Leeb, H.; Weiss, C.] Vienna Univ Technol, Inst Atom, Vienna, Austria. [Jenkins, D. G.; Vermeulen, M. J.] Univ York, York YO10 5DD, N Yorkshire, England. [Kaeppeler, F.] Karlsruhe Inst Technol, Inst Kernphys, D-76021 Karlsruhe, Germany. [Koehler, P.] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA. [Lederer, C.; Pavlik, A.; Wallner, A.] Univ Vienna, Fac Phys, A-1010 Vienna, Austria. [Massimi, C.; Mingrone, F.; Vannini, G.] Univ Bologna, Dipartimento Fis, I-40126 Bologna, Italy. [Massimi, C.; Mingrone, F.; Vannini, G.] Sez INFN Bologna, Bologna, Italy. [Mengoni, A.; Ventura, A.] Agenzia Nazl Nuove Tecnol, Eenergia & Sviluppo Econ Sostenibile ENEA, Bologna, Italy. [Milazzo, P. M.] Ist Nazl Fis Nucl, Trieste, Italy. [Mirea, M.; Roman, F.] Horia Hulubei Natl Inst Phys & Nucl Engn, IFIN HH, Bucharest, Romania. [Mondalaers, W.; Plompen, A.; Schillebeeckx, P.] European Commiss JRC, Inst Reference Mat & Measurements, B-2440 Geel, Belgium. [Rauscher, T.] Univ Basel, Dept Phys & Astron, Basel, Switzerland. [Rubbia, C.] Ist Nazl Fis Nucl, Lab Nazl Gran Sasso, Assergi, AQ, Italy. : Elsevier BV. - 0090-3752 .- 1095-9904. ; 119, s. 35-37
  • Tidskriftsartikel (refereegranskat)abstract
    • The angular distribution of fragments emitted in neutron-induced fission of Th-232 was measured in the white spectrum neutron beam at the n_TOF facility at CERN. A reaction chamber based on Parallel Plate Avalanche Counters (PPAC) was used, where the detectors and the targets have been tilted 45 degrees with respect to the neutron beam direction in order to cover the full angular range of the fission fragments. A GEANT4 simulation has been developed to study the setup efficiency. The data analysis and the preliminary results obtained for the Th-232(n,f) between fission threshold and 100 MeV are presented here.
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3.
  • Tarrío, Diego, et al. (författare)
  • Measurement of the angular distribution of fission fragments using a PPAC assembly at CERN n_TOF
  • 2014
  • Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier BV. - 0168-9002 .- 1872-9576. ; 743, s. 79-85
  • Tidskriftsartikel (refereegranskat)abstract
    • A fission reaction chamber based on Parallel Plate Avalanche Counters (PPACs) was built for measuring angular distributions of fragments emitted in neutron-induced fission of actinides at the neutron beam available at the Neutron Time-Of-Flight (n_TOF) facility at CERN. The detectors and the samples were tilted 45 degrees with respect to the neutron beam direction to cover all the possible values of the emission angle of the fission fragments. The main features of this setup are discussed and results on the fission fragment angular distribution are provided for the Th-232(n,f) reaction around the fission threshold. The results are compared with the available data in the literature, demonstrating the good capabilities of this setup.
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4.
  • Avolio, G., et al. (författare)
  • A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
  • 2013
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467361767 ; , s. Art. no. 6697394-
  • Konferensbidrag (refereegranskat)abstract
    • In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.
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5.
  • Avolio, G., et al. (författare)
  • Identification technique of FET model based on vector nonlinear measurements
  • 2011
  • Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 47:24, s. 1323-U37
  • Tidskriftsartikel (refereegranskat)abstract
    • A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low-and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.
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6.
  • Avolio, G., et al. (författare)
  • Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique
  • 2014
  • Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 62:11, s. 2526-2537
  • Tidskriftsartikel (refereegranskat)abstract
    • In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under "dynamic-bias" operation. Specifically, the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them. The low-frequency large signals, along with the dc bias voltages, set the large-signal operating point which represents a dynamic-bias condition for the device under test. Thanks to this technique, one can get at once and separately the nonlinear currents and charges of the transistor as a result of a very few nonlinear measurements. Additionally, the proposed technique allows one to accurately reconstruct the time-domain waveforms at the device-under-test terminals while the frequency of the tickle can be set as high as the bandwidth of today's vector calibrated nonlinear measurement systems (i.e., 67 GHz). The approach, which is general and independent of device technology, is applied on a 0.15-mu m GaAs pHEMT specifically designed for resistive cold-FET mixer applications.
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7.
  • Avolio, G., et al. (författare)
  • Nonlinear model for 40-GHz cold-FET operation
  • 2014
  • Ingår i: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014.
  • Konferensbidrag (refereegranskat)abstract
    • We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
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8.
  • Avolio, G., et al. (författare)
  • Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
  • 2014
  • Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 24:6, s. 394-396
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.
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9.
  • Avolio, G., et al. (författare)
  • Waveforms-based large-signal identification of transistor models
  • 2012
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
  • Konferensbidrag (refereegranskat)abstract
    • Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The I DS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low-(2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under low-frequency operation the contribution of the charge sources and any other reactive element can be neglected. In this way the identification of the IDS parameters is more accurate while remarkably speeding up the optimization routine as well. The proposed procedure is quite general and can be applied to different types of active devices. As case study, a 0.25-μm GaAs pHEMT is considered and the extracted model is validated under conditions different than the ones exploited within the identification step. A very good agreement between model predictions and experimental data is achieved.
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10.
  • Angelov, Iltcho, 1943, et al. (författare)
  • Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
  • 2013
  • Ingår i: 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013. - 9782874870316 ; , s. 267-270
  • Konferensbidrag (refereegranskat)abstract
    • This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.
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