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Träfflista för sökning "WFRF:(Veje E.) srt2:(2000-2004)"

Sökning: WFRF:(Veje E.) > (2000-2004)

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1.
  • Da, Silva A.F., et al. (författare)
  • Asymmetric nonlinear amplitude in patterns of porous silicon
  • 2000
  • Ingår i: Physica A. - 0378-4371 .- 1873-2119. ; 283:1, s. 223-227
  • Tidskriftsartikel (refereegranskat)abstract
    • A gradient pattern analysis is used to report a phenomenogical evidence of asymmetric nonlinear spatial distribution of porous silicon structures. We used a canonical sample set obtained from scanning force microscopy. Due to the high sensitivity of the gradient field operator, it is possible to correlate the photoluminescence performance of porous silicon with different degree of asymmetries and spatial nonlinearity. A generalization of this new approach to quantify nonlinear amplitude fragmentation in complex lattices is proposed.
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2.
  • Ahuja, Rajeev, et al. (författare)
  • Electronic and optical properties of lead iodide
  • 2002
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
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3.
  • Ferreira, Da Silva A., et al. (författare)
  • Characterization of asymmetric fragmentation patterns in SFM images of porous silicon
  • 2000
  • Ingår i: Solid State Communications. - 0038-1098 .- 1879-2766. ; 113:12, s. 703-708
  • Tidskriftsartikel (refereegranskat)abstract
    • Due to possible technological applications in opto-electronic devices, the interest in characterizing porous silicon structure patterns has recently increased. From scanning force microscopy (SFM) we have obtained images of different samples of porous silicon and applied pattern characterization operators on these matrices. In this paper, asymmetric spatial fragmentation in amplitude envelopes of porous silicon samples are characterized by means of a parameter that quantifies the amount of spatial asymmetry in the gradient field. The results show that this method is well suited to characterize silicon porosity quantitatively.
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  • Resultat 1-3 av 3

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