| 1. |
- Azarov, Alexander, et al.
(författare)
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Dopant incorporation in thin strained Si layers implanted with Sb
- 2010
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 518:9, s. 2474-2477
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Tidskriftsartikel (refereegranskat)abstract
- The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.
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| 2. |
- Neuvonen, P. T., et al.
(författare)
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Transportation of Na and Li in hydrothermally grown ZnO
- 2010
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Ingår i: Zinc oxide and related materials 2009. - : Materials Research Society. - 9781605111742 ; , s. 29-34
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Konferensbidrag (refereegranskat)abstract
- Secondary ion mass spectrometry has been applied to study the transportation of Na and Li in hydrothermally grown ZnO. A dose of 10 15 cm-2 of Na+ was implanted into ZnO to act as a diffusion source. A clear trap limited diffusion is observed at temperatures above 550 °C. From these profiles, an activation energy for the transport of Na of 7 ∼1.7 eV has been extracted. The prefactor for the diffusion constant and the solid solubility of Na cannot be deduced independently from the present data but their product estimated to be ∼ 3 × 1016 cm-1 s-1. A dissociation energy of ∼2.4 eV is extracted for the trapped Na. The measured Na and Li profiles show that Li and Na compete for the same traps and interact in a way that Li is depleted from Na-rich regions. This is attributed to a lower formation energy of Na-on-zinc-site than that for Li-on-zinc-site defects and the zinc vacancy is considered as a major trap for migrating Na and Li atoms. Consequently, the diffasivity of Li is difficult to extract accurately from the present data, but in its interstitial configuration Li is indeed highly mobile having a diffasivity in excess of 10-11 cm2 s-1 at 500 °C .
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| 3. |
- Stehr, Jan Eric, et al.
(författare)
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Zinc-Vacancy–Donor Complex : A Crucial Compensating Acceptor in ZnO
- 2014
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 2:021001
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Tidskriftsartikel (refereegranskat)abstract
- The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.
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