| 1. |
- Böttger, Michael, et al.
(författare)
-
Electrospraying of colloidal nanoparticles for seeding of nanostructure growth
- 2007
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:10
-
Tidskriftsartikel (refereegranskat)abstract
- Nanometre-sized particles (1-100 nm) have unique properties receiving growing attention in wide areas of research. Here, a convenient method to deposit size-selected nanoparticles on surfaces by means of electrospraying colloidal suspensions in the aerosol phase is presented. We demonstrate the deposition of individual nanoparticles and the feasibility of this method in seeding gold particles for nanostructure growth. An advantage of the present method is the easy set-up and operation, using only commercially available machinery and substances. Problems regarding low deposition rates and colloidal remnants are approached, e. g. the aerosol flow is examined in a differential mobility analyser. This method is not material dependent and could be extended to deposit any colloidal particle.
|
|
| 2. |
|
|
| 3. |
- Deppert, Knut, et al.
(författare)
-
Epitaxielle Kristallnadeln und -bäume
- 2005
-
Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
- Dick Thelander, Kimberly, et al.
(författare)
-
Improving InAs nanotree growth with composition-controlled Au-In nanoparticles
- 2006
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:5, s. 1344-1350
-
Tidskriftsartikel (refereegranskat)abstract
- Au nanoparticles are commonly used as seeds for epitaxial growth of III-V semiconductor nanowires. However, the interaction between Au and In-containing III-V materials makes it difficult to control the growth of more complex nanowire structures in materials such as InAs. Here we report the growth of InAs nanowires and branched nanotrees using Au and Au-In nanoparticles. We show that the initial composition of the particle does not affect the morphology of the first-generation nanowires, nor does it affect the final composition of the particle after growth. However, when the Au-In particles were used to seed a second generation of nanowires, producing nanotrees, the branches exhibited a 2-3 times higher growth rate and more regular shape than those seeded by pure Au particles. This result is attributed to the decreased interaction between the seed particle and the trunk nanowires when Au-In particles are used. Thus the incorporation of In into the seed particle during particle production allows for modification of the particle-wire interaction.
|
|
| 7. |
- Fröberg, Linus, et al.
(författare)
-
Transients in the Formation of Nanowire Heterostructures.
- 2008
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:11, s. 3815-3818
-
Tidskriftsartikel (refereegranskat)abstract
- We present results on the effect of seed particle reconfiguration on the growth of short InAs and InP nanowire segments. The reconfiguration originates in two different steady state alloy compositions of the Au/In seed particle during growth of InAs and InP. From compositional analysis of the seed particle, the In content in the seed particle is determined to be 34 and 44% during InAs and InP growth, respectively. When switching between growing InAs and InP, transient effects dominate during the time period of seed particle reconfiguration. We developed a model that quantitatively explains the effect and with the added understanding we are now able to grow short period (<10 nm) nanowire superlattices.
|
|
| 8. |
- Johansson, Jonas, et al.
(författare)
-
Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires
- 2008
-
Ingår i: Journal of Chrystal Growth. - : Elsevier BV. - 0022-0248. ; 310:23, s. 5102-5105
-
Konferensbidrag (refereegranskat)abstract
- we present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal-particle-seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor-phase epitaxy under different conditions: pulsing of the Ga source, and Continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite-phase forms. Our results suggest that it might be possible to predict the conditions necessary for the growth of wires with perfect crystal structure. We interpret our results in terms of the supersaturation during growth. (C) 2008 Elsevier B.V. All rights reserved.
|
|
| 9. |
- Johansson, Jonas, et al.
(författare)
-
Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires
- 2009
-
Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 9:2, s. 766-773
-
Tidskriftsartikel (refereegranskat)abstract
- We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite phase forms. We explain the importance of the In background during growth. With classical nucleation modeling we qualitatively relate the density of planar defects in a nanowire to the growth conditions. For low supersaturations, we predict a low twin plane density, consistent with our experimental observations of pulsed nanowire growth. In addition, we suggest that under certain conditions, it might be possible to grow wires with almost perfect wurtzite structure.
|
|
| 10. |
- Johansson, Jonas, et al.
(författare)
-
Growth related aspects of epitaxial nanowires
- 2006
-
Ingår i: Nanotechnology. - 0957-4484. ; 17:11, s. 355-361
-
Tidskriftsartikel (refereegranskat)abstract
- We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III - V materials, such as GaAs, GaP, InAs, and InP. In this paper we focus on gold assisted growth of nanowires. The nature of the metal particle - whether it is in the solid or liquid state - is discussed. For InAs and InP we have demonstrated that gold assisted wires can only grow at temperatures where the particle is solid. We continue with a discussion concerning the kinetic aspects of nanowire growth. Under common growth conditions one observes that thinner wires grow faster than thicker wires, contrary to what was described in the early days of whisker growth. We address and resolve this discrepancy by discussing a simple transport model and comparing the supersaturations of different systems. Finally, we describe the morphology of epitaxial III - V nanowires with emphasis on the crystal structure.
|
|
