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Sökning: WFRF:(Wahlstrom G) > (2010-2014)

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  • Batani, D., et al. (författare)
  • Effects of laser prepulses on laser-induced proton generation
  • 2010
  • Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 12
  • Tidskriftsartikel (refereegranskat)abstract
    • Low-intensity laser prepulses (<10(13) W cm(-2), nanosecond duration) are a major issue in experiments on laser-induced generation of protons, often limiting the performances of proton sources produced by high-intensity lasers (approximate to 10(19) W cm(-2), picosecond or femtosecond duration). Depending on the intensity regime, several effects may be associated with the prepulse, some of which are discussed in this paper: (i) destruction of thin foil targets by the shock generated by the laser prepulse; (ii) creation of preplasma on the target front side affecting laser absorption; (iii) deformation of the target rear side; and (iv) whole displacement of thin foil targets affecting the focusing condition. In particular, we show that under oblique high-intensity irradiation and for low prepulse intensities, the proton beam is directed away from the target normal. Deviation is towards the laser forward direction, with an angle that increases with the level and duration of the ASE pedestal. Also, for a given laser pulse, the beam deviation increases with proton energy. The observations are discussed in terms of target normal sheath acceleration, in combination with a laser-controllable shock wave locally deforming the target surface.
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  • Cooil, S. P., et al. (författare)
  • Iron-mediated growth of epitaxial graphene on SiC and diamond
  • 2012
  • Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 50:14, s. 5099-5105
  • Tidskriftsartikel (refereegranskat)abstract
    • Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. (c) 2012 Elsevier Ltd. All rights reserved.
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