| 1. |
- Birch, J., et al.
(författare)
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Structural characterization of precious-mean quasiperiodic Mo/V single-crystal superlattices grown by dual-target magnetron sputtering
- 1990
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Ingår i: Physical Review B. - 1098-0121. ; 41:15, s. 10398-10407
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Tidskriftsartikel (refereegranskat)abstract
- A class of quasiperiodic superlattice structures, which can be generated by the concurrent inflation rule A→AmB and B→A (where m=positive integer), has been studied both theoretically and experimentally. Given that the ratios between the thicknesses of the two superlattice building blocks, A and B, are chosen to be γ(m)=[m+(m2+4)1/2]/2 (known as the ‘‘precious means’’), then the x-ray- and electron-diffraction peak positions are analytically found to be located at the wave vectors q=2πΛ−1r[γ(m)]k, where r and k are integers and Λ is an average superlattice wavelength. The analytically obtained results have been compared to experimental results from single-crystalline Mo/V superlattice structures, generated with m=1, 2, and 3. The superlattices were grown by dual-target dc-magnetron sputtering on MgO(001) substrates kept at 700 °C. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) showed that the analytical model mentioned above predicts the peak positions of the experimental XRD and SAED spectra with a very high accuracy. Furthermore, numerical calculations of the diffraction intensities based on a kinematical model of diffraction showed good agreement with the experimental data for all three cases. In addition to a direct verification of the quasiperiodic modulation, both conventional and high-resolution cross-sectional transmission electron microscopy (XTEM) showed that the superlattices are of high crystalline quality with sharp interfaces. Based on lattice resolution images, the width of the interfaces was determined to be less than two (002) lattice-plane spacings (≊0.31 nm).
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| 2. |
- Sanati, Mehri, et al.
(författare)
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Zirconia-Supported Vanadium Oxide Catalysts for Ammoxidation and Oxidation of Toluene: A Characterization and Activity Study
- 1993
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Ingår i: Applied Catalysis A: General. - 0926-860X. ; 106:1, s. 51-72
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Tidskriftsartikel (refereegranskat)abstract
- A series of samples of vanadia supported on monoclinic zirconia were prepared with nominal loadings from a half up to sixteen theoretical vanadia layers. The samples were characterized with X-ray diffraction, scanning electron microscopy combined with energy dispersive X-ray analysis, high-resolution electron microscopy, Raman and diffuse reflectance infrared spectroscopy, and were used in the oxidation and the ammoxidation of toluene. At loadings in the monolayer range, Raman and infrared bands from decavanadate-like and dehydrated tetrahedral vanadia species were at ca. 990 and ca. 1025 cm−1, respectively. Raman bands at 821 and 880 cm−1 were present only at the lowest loading and are characteristic of orthovanadate and pyrovanadate species, respectively. X-ray diffraction, Raman and infrared spectroscopic results revealed formation of some crystalline V2O5 and ZrV2O7 at loadings exceeding a theoretical monolayer. In this case, consideration of Raman intensity variations allowed the conclusion that additional non-crystalline vanadia must be present. According to high-resolution electron micrographs, this vanadia consists of an amorphous overlayer, 4–8 atomic layers thick. In toluene oxidation zirconia-supported vanadia compared with crystalline V2O5 was found less selective for benzaldehyde formation. In toluene ammoxidation, on the other hand, vanadia on zirconia was found to possess good activity and selectivity for benzonitrile formation. Amorphous vanadia was the most active structure on zirconia, while the selectivities for nitrile and aldehyde formations were almost independent of the loading for one theoretical layer and above.
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| 3. |
- Vavra, I, et al.
(författare)
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The influence of thermal processing on structural and electrical properties of WxSi1−x/Si multilayers
- 1994
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - 0168-9002. ; 350:1-2, s. 379-390
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Tidskriftsartikel (refereegranskat)abstract
- Thermal stability of WxSi1−x/Si multilayers (MLs) with x varying from 1 to 0.11 is studied by TEM and LAXS. The structure of the prepared samples is amorphous. Doping of W sublayers with silicon affects the interdiffusion process as well as the crystallization in these sublayers. We investigated these two processes (which have a detrimental influence on e.g. X-ray mirror stability) by annealing our samples at 400°C for 40 min. The structural changes were monitored by resistance measurement in the temperature range of 1.5–300 K. A correlation between structural and electrical characteristics was found, which is based on the comparison between three different R(T) curves. It is shown in our paper that the R(T) curve of a ML lies between the R(T) curves of two extreme types of single layers. The first single layer is the analogue of a fully intermixed ML and the second one represents a parallel connection of all conductive sublayers. Thus, a simple resistance measurement can give additional information about the quality of interfaces. We claim that in MLs with ultrathin sublayers the reported highest thermal stability of the amorphous mixture W0.72Si0.28 cannot be utilized because interdiffusion dominates over crystallization so that the superlattice structure is not retained.
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