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| 2. |
- Alami, Jones, et al.
(författare)
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Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
- 2007
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:7-8, s. 3434-3438
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Tidskriftsartikel (refereegranskat)abstract
- Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.
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| 3. |
- Andersson, Jon M., et al.
(författare)
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Ab initio calculations on the effects of additives on alumina phase stability
- 2005
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Ingår i: Physical review. B, Condensed matter and materials physics. - 1098-0121 .- 1550-235X. ; 71:014101, s. 014101-
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Tidskriftsartikel (refereegranskat)abstract
- The effects of substitutional additives on the properties and phase stability of - and -alumina (Al2O3), are investigated by density functional theory total energy calculations. The dopants explored are 5 at. % of Cr, Mo, Co, and As substituting for Al, respectively, N and S substituting for O, in the and lattices. Overall, the results show that it is possible to shift, and even reverse, the relative stability between - and -alumina by substitutional additives. The alumina bulk moduli are, in general, only slightly affected by the dopants but density of states profiles reveal additional peaks in the alumina band gaps. We also show that phase separations into pure oxides are energetically favored over doped alumina formation, and we present results on a number of previously unstudied binary oxides.
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| 4. |
- Andersson, Jon M., et al.
(författare)
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Energy distributions of positive and negative ions during magnetron sputtering of an Al target in Ar/O2 mixtures
- 2006
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Ingår i: Journal of Applied Physics. - College Park, MD, United States : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 100:3, s. Art. No. 033305 AUG 1 2006-
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Tidskriftsartikel (refereegranskat)abstract
- The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by energy-resolved mass spectrometry, as a function of the total and O2 partial pressures. The positive ions of film-forming species exhibited bimodal energy distributions, both for direct current and radio frequency discharges, with the higher energy ions most likely originating from sputtered neutrals. For the negative oxygen ions a high-energy peak was observed, corresponding to ions formed at the target surface and accelerated towards the substrate over the sheath potential. As the total pressure was increased the high-energy peaks diminished due to gas-phase scattering. Based on these results, the role of energetic bombardment for the phase constituent of alumina thin films are discussed.
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| 5. |
- Andersson, Jon M., et al.
(författare)
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Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al
- 2006
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Ingår i: Applied Physics Letters. - : Institutionen för fysik, kemi och biologi. - 0003-6951 .- 1077-3118. ; 88:05, s. Art. No. 054101 JAN 30 2006-
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Tidskriftsartikel (refereegranskat)abstract
- The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by mass spectrometry. The results show significant amounts of molecular AlO+ (up to 10% of the Al+ flux) in the ionic flux incident onto the substrate. In the presence of ~10–4 Pa H2O additional OH+ and AlOH+ were detected, amounting to up to about 100% and 30% of the Al+ flux, respectively. Since the ions represent a small fraction of the total deposition flux, an estimation of the neutral content was also made. These calculations show that, due to the higher ionization probability of Al, the amount of neutral AlO in the deposition flux is of the order of, or even higher than, the amount of Al. These findings might be of great aid when explaining the alumina thin film growth process.
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| 6. |
- Andersson, Jon Martin, et al.
(författare)
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Phase control of Al2O3 thin films grown at low temperatures
- 2006
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 513:1-2, s. 57-59
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Tidskriftsartikel (refereegranskat)abstract
- Low-temperature growth (500 °C) of α-Al2O3 thin films by reactive magnetron sputtering was achieved for the first time. The films were grown onto Cr2O3 nucleation layers and the effects of the total and O2 partial pressures were investigated. At 0.33 Pa total pressure and ≥ 16 mPa O2 partial pressure α-Al2O3 films formed, while at lower O2 pressure or higher total pressure (0.67 Pa), only γ phase was detected in the films (which were all stoichiometric). Based on these results we suggest that α phase formation was promoted by a high energetic bombardment of the growth surface. This implies that the phase content of Al2O3 films can be controlled by controlling the energy of the depositing species. The effect of residual H2O (10− 4 Pa) on the films was also studied, showing no change in phase content and no incorporated H (< 0.1%). Overall, these results are of fundamental importance in the further development of low-temperature Al2O3 growth processes.
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