| 1. |
- Dunham, I, et al.
(författare)
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The DNA sequence of human chromosome 22
- 1999
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 402:6761, s. 489-495
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Tidskriftsartikel (refereegranskat)
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| 2. |
- Baldsiefen, G, et al.
(författare)
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Shears bands in Pb-193
- 1996
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Ingår i: Physical Review C. Nuclear Physics. - 0556-2813 .- 1089-490X. ; 54:3, s. 1106-1116
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Tidskriftsartikel (refereegranskat)abstract
- Four bands of enhanced dipole transitions, with weak crossovers, have been observed in Pb-195. Three of these bands are connected to the spherical levels. in addition, the spherical level scheme has been extended. The nuclear spectroscopy was done with the early implementation of GAMMASPHERE and HERA arrays of Get detectors. The nucleus Pb-193 was populated in the Yb-174(Mg-24,5n) reaction at beam energies of 129, 131, and 134 MeV. The experimental results are compared to tilted-axis cranking calculations. The systematical behavior of the dipole bands in the heavier odd-A Pb isotopes, Pb-195,Pb-197,Pb-199,Pb-201, is also discussed.
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| 3. |
- Stenman, U H, et al.
(författare)
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Summary report of the TD-3 workshop: characterization of 83 antibodies against prostate-specific antigen
- 1999
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Ingår i: Tumor Biology. - : Springer Science and Business Media LLC. - 1423-0380 .- 1010-4283. ; 20:Suppl. 1, s. 1-12
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Tidskriftsartikel (refereegranskat)abstract
- Twelve research groups participated in the ISOBM TD-3 Workshop in which the reactivity and specificity of 83 antibodies against prostate-specific antigen (PSA) were investigated. Using a variety of techniques including cross-inhibition assays, Western blotting, BIAcore, immunoradiometric assays and immunohistochemistry, the antibodies were categorized into six major groups which formed the basis for mapping onto two- and three-dimensional (2-D and 3-D) models of PSA. The overall findings of the TD-3 Workshop are summarized in this report. In agreement with all participating groups, three main antigenic domains were identified: free PSA-specific epitopes located in or close to amino acids 86-91; discontinuous epitopes specific for PSA without human kallikrein (hK2) cross-reactivity located at or close to amino acids 158-163; and continuous or linear epitopes shared between PSA and hK2 located close to amino acids 3-11. In addition, several minor and partly overlapping domains were also identified. Clearly, the characterization of antibodies from this workshop and the location of their epitopes on the 3-D model of PSA illustrate the importance of selecting appropriate antibody pairs for use in immunoassays. It is hoped that these findings and the epitope nomenclature described in this TD-3 Workshop are used as a standard for future evaluation of anti-PSA antibodies.
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| 4. |
- Wang, J. J., et al.
(författare)
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Low damage, highly anisotropic dry etching of SiC
- 1998
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Ingår i: High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International. ; , s. 10-14
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Konferensbidrag (refereegranskat)abstract
- A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.5N0.5 in Inductively Coupled Plasma NF3/O2 and NF 3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions
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| 5. |
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| 6. |
- Wang, J. J., et al.
(författare)
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ICP etching of SiC
- 1998
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:12, s. 2283-2288
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Tidskriftsartikel (refereegranskat)abstract
- A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in an inductively coupled plasma tool. Rates above 2000 Å cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni is preferred. © 1998 Published by Elsevier Science Ltd. All rights reserved.
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| 7. |
- Wang, J. J., et al.
(författare)
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Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries
- 1998
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - 0734-2101 .- 1520-8559. ; 16:4, s. 2204-2209
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Tidskriftsartikel (refereegranskat)abstract
- A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin-film SiC0.5N0.5 in inductively coupled plasma (ICP) NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide masks display relatively good etch selectivity over SiC (maximum of ∌70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. © 1998 American Vacuum Society.
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| 8. |
- Wang, J. J., et al.
(författare)
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High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
- 1998
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:5, s. 743-747
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Tidskriftsartikel (refereegranskat)abstract
- Etch rates of ∌3,500 Å/min for 6H-SiC and ∌7,500 Å/min for SiC0.5N0.5 were obtained in inductively coupled plasmas with NF3-based chemistries. Similar etch rate trends were achieved with both NF3/O2 and NF3/Ar mixtures. The rates were strong functions of plasma composition, ion energy and ion fluxes, and were independent of conductivity type for SiC. Surface root-mean-square (RMS) roughness were 1-2 nm for etched SiC over a wide range of conditions indicating equi-rate removal of the SiFx and CFx etch products, but SiCN surfaces became extremely rough (RMS roughness > 20 nm) for F2-rich plasma conditions. The etched surfaces of SiC were chemically clean and stoichiometric, with small (<0.2 at%) quantities of N2- or F2- containing residues detected. © 1998 Elsevier Science Ltd. All rights reserved.
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| 9. |
- Wang, J. J., et al.
(författare)
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ICP etching of SiC
- 1997
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA, USA. ; , s. 177-183
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Konferensbidrag (refereegranskat)abstract
- A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 angstroms·cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni are preferred.
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| 10. |
- West, Jay B., et al.
(författare)
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Comparison and evaluation of retrospective intermodality image registration techniques
- 1997
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Ingår i: SPIE - The International Society for Optical Engineering. - : SPIE - International Society for Optical Engineering. ; , s. 332-347
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Konferensbidrag (refereegranskat)abstract
- All retrospective image registration methods have attached to them some intrinsic estimate of registration error. However, this estimate of accuracy may not always be a good indicator of the distance between actual and estimated positions of targets within the cranial cavity. This paper describes a project whose principal goal is to use a prospective method based on fiducial markers as a ’gold standard’ to perform an objective, blinded evaluation of the accuracy of several retrospective image-to-image registration techniques. Image volumes of three modalities – CT, MR, and PET – were taken of patients undergoing neurosurgery at Vanderbilt University Medical Center. These volumes had all traces of the fiducial markers removed, and were provided to project collaborators outside Vanderbilt, who then performed retrospective registrations on the volumes, calculating transformations from CT to MR and/or from PET to MR, and communicated their transformations to Vanderbilt where the accuracy of each registration was evaluated. In this evaluation the accuracy is measured at multiple ’regions of interest,’ i.e. areas in the brain which would commonly be areas of neurological interest. A region is defined in the MR image and its centroid C is determined. Then the prospective registration is used to obtain the corresponding point C’ in CT or PET. To this point the retrospective registration is then applied, producing C’ in MR. Statistics are gathered on the target registration error (TRE), which is the disparity between the original point C and its corresponding point C’. A second goal of the project is to evaluate the importance of correcting geometrical distortion in MR images, by comparing the retrospective TRE in the rectified images, i.e., those which have had the distortion correction applied, with that of the same images before rectification. This paper presents preliminary results of this study along with a brief description of each registration technique and an estimate of both preparation and execution time needed to perform the registration.
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