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| 2. |
- Jeppson, Kjell, 1947, et al.
(författare)
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Theory of a room-temperature silicon quantum dot device as a sensitive electrometer
- 2004
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Ingår i: Journal of Applied Physics. - Melville, NY : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:1, s. 323-326
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Tidskriftsartikel (refereegranskat)abstract
- We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dotand quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current-voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometerapplications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes indevice power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width. (©2004 American Institute of Physics)
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| 3. |
- Nawaz, M, et al.
(författare)
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A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation
- 2003
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Ingår i: Solid-State Electronics. - : Elsevier Science B.V., Amsterdam.. - 0038-1101 .- 1879-2405. ; 47:2, s. 291-295
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Tidskriftsartikel (refereegranskat)abstract
- Using self-consistent two-dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/ GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to non-uniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths.
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| 4. |
- Vincent, Jonathan, et al.
(författare)
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Theory of a room-temperature silicon quantum dot transitor as a sensitive electrometer
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95, s. 323-
-
Tidskriftsartikel (refereegranskat)abstract
- We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dot and quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current–voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometer applications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes in device power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width.
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