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Träfflista för sökning "WFRF:(Winkler Dag 1957) srt2:(2010-2014)"

Sökning: WFRF:(Winkler Dag 1957) > (2010-2014)

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1.
  • Chang, S, et al. (författare)
  • An electrowetting-based microfluidic platform for magnetic bioassays
  • 2010
  • Ingår i: The 14th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2010, 3-7 Oktober, Groningen, Neterlands. - 9781618390622 ; 2, s. 1331-1333
  • Konferensbidrag (refereegranskat)abstract
    • Here we present our recent work on a droplet-based microfluidic device for manipulating microliter-sized droplets. By replacing the formerly used common dielectric SiO2 with Si3N4 and applying a 33 nm thick Teflon top layer to create a hydrophobic surface, we successfully lowered the actuation voltage from 450 V to 50 Vdc/40 Vac. Sputtered HfO2 with high dielectric constant was also investigated as an insulator, which could reproducibly yield thin defect-free insulation layers and lower the actuation voltage to less than 40 V.
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2.
  • Aurino, Pier Paolo, 1985, et al. (författare)
  • Nano-patterning of the electron gas at the LaAlO3/SrTiO3 interface using low-energy ion beam irradiation
  • 2013
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:20, s. 201610-
  • Tidskriftsartikel (refereegranskat)abstract
    • The quasi-two dimensional electron gas formed at the interface between LaAlO3 (LAO) and SrTiO3 (STO) shows fascinating properties, such as two-dimensional superconductivity, giant electric field effect, and the possible co-existence of ferromagnetic and superconducting phases. In this work, we demonstrate that the conducting LAO/STO interface can be made insulating after short irradiation by a beam of low energy Ar+ ions. The irradiation process does neither result in physical removal of the LAO film nor produces oxygen vacancies in the STO layer. Using electron beam lithography and low ion beam energy irradiation, we fabricated conducting nano-structures in the LAO/STO interface with dimensions down to 50 nm. Such a reliable and robust method of nano-patterning may be a prerequisite for future electronic applications of the LAO/STO interface.
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3.
  • Boikov, Iouri, 1949, et al. (författare)
  • Atomic rearrangements at the TiO2-terminated (001)SrTiO3 surface and growth of thin LaMnO3 films
  • 2013
  • Ingår i: Europhysics Letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 102:5
  • Tidskriftsartikel (refereegranskat)abstract
    • SrTiO3 is commonly used as a substrate for growth of various oxide films. Different reconstructions at the SrTiO3 surface have been claimed. A question is whether these survive subsequent depositions of thin films and influence film properties. Medium energy ion scattering (MEIS) was used to probe structure and composition of the surface layer of a TiO2-terminated (001) SrTiO3 single-crystal substrate and 1-4 unit cell (u.c.) thick LaMnO3 epilayers. Aligned spectra indicate enrichment of Ti at the surface and a TiO2 double-layer (DL) configuration. The DL arrangement survives pulsed-laser deposition of LaMnO3 in a background of high oxygen pressure (5 x 10(-2) mbar) while it is destroyed at lower oxygen pressure (10(-4) mbar). Simulations of random MEIS spectra indicate substantial interdiffusion and La doping of the substrate surface but all interfaces are nevertheless insulating.
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4.
  • Chukharkin Leonidovich, Maxim, 1980, et al. (författare)
  • Improvement of Ultra-Low Field Magnetic Resonance Recordings With a Multilayer Flux-Transformer-Based High-T-C SQUID Magnetometer
  • 2013
  • Ingår i: Ieee Transactions on Applied Superconductivity. - : Institute of Electrical and Electronics Engineers (IEEE). - 1051-8223 .- 1558-2515. ; 23:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We have developed a multilayer flux-transformer-based high-T-C SQUID (flip-chip) magnetometer that improves signal-to-noise-ratios (SNR) in ultra-low field magnetic resonance (ulf-MR) recordings of protons in water. Direct ulf-MR-based benchmarking of the flip-chip versus a standard planar high-T-C SQUID magnetometer resulted in improvement of the SNR by a factor of 2. This gain is attributable to the improved transformation coefficient (1.9 vs 5.3 nT/Phi(0)) that increased the signal available to the flip-chip sensor and to the lower noise at the measurement frequency (15 vs 25 fT/Hz(1/2) at 4 kHz). The improved SNR can lead to better spectroscopic resolution, lower imaging times, and higher resolution in ulf-MR imaging systems based on high-T-C SQUID technology. The experimental details of the sensors, calibration, and ulf-MR benchmarking are presented in this report.
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5.
  • Chukharkin Leonidovich, Maxim, 1980, et al. (författare)
  • Noise properties of high-T-c superconducting flux transformers fabricated using chemical-mechanical polishing
  • 2012
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:4, s. Article Number: 042602 -
  • Tidskriftsartikel (refereegranskat)abstract
    • Reproducible high-temperature superconducting multilayer flux transformers were fabricated using chemical mechanical polishing. The measured magnetic field noise of the flip-chip magnetometer based on one such flux transformer with a 9 x 9 mm(2) pickup loop coupled to a bicrystal dc SQUID was 15 fT/Hz(1/2) above 2 kHz. We present an investigation of excess 1/f noise observed at low frequencies and its relationship with the microstructure of the interlayer connections within the flux transformer. The developed high-T-c SQUID magnetometers may be advantageous in ultra-low field magnetic resonance imaging and, with improved low frequency noise, magnetoencephalography applications.
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6.
  • Chukharkin Leonidovich, Maxim, 1980, et al. (författare)
  • Noise properties of HTS flux transformers fabricated by chemical-mechanical polishing
  • 2011
  • Ingår i: European conference on applied superconductivity.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • We present on fabrication and noise properties of high-temperature superconducting (HTS) thin-film integrated multilayer flux transformers fabricated using planarization of YBCO films by chemical-mechanical polishing (CMP). The polishing allows fabrication of very shallow slope edges (less than 5°) in the YBa2Cu3O7, that makes it possible to avoid formation of grain boundary junctions in crossovers and obtain very high critical current densities in the top electrode of about 2•106 A/cm2. The same planarization process is used to create interconnections between top and bottom superconducting electrodes through the SrTiO3/PrBa2Cu3O7/SrTiO3 insulating layer. HTS multilayer flip-chip flux transformer with 8x8 mm2 pickup loop and 20-turn input coil was fabricated and coupled to a bicrystal dc SQUID in a flip-chip configuration. We measured magnetic field gain of 1.2 nT/Ф0 and magnetic flux noise of the magnetometer 10 µФ0/√Hz at 1 kHz, which corresponds to magnetic field noise of 12 ft/√Hz. FLUX NOISE AT LOW FREQUENCIES! The work is supported by European FP7 project "MEGMRI" under contract number 200859.
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7.
  • Chukharkin Leonidovich, Maxim, 1980, et al. (författare)
  • Novel HTS DC squid solutions for NMR applications
  • 2014
  • Ingår i: NATO Science for Peace and Security Series B: Physics and Biophysics. - Dordrecht : Springer Netherlands. - 1874-6500. - 9789400772649 ; 2014, s. 151-159
  • Tidskriftsartikel (refereegranskat)abstract
    • We have developed a multilayer flux-transformer-based high-TC SQUID (flip-chip) magnetometer that improves signal-to-noise-ratios (SNR) in ultra-low field magnetic resonance (ulf-MR) recordings of protons in water. Direct ulf-MR-based benchmarking of the flip-chip versus a standard planar high-T C SQUID magnetometer resulted in improvement of the SNR by a factor of 2. This gain is attributable to the improved transformation coefficient (1.9 vs 5.3 nT/Φ0) that increased the signal available to the flip-chip sensor and to the lower noise at the measurement frequency (15 vs 25 fT/Hz1/2 at 4 kHz). The improved SNR can lead to better spectroscopic resolution, lower imaging times, and higher resolution in ulf-MR imaging systems based on high-T C SQUID technology. The experimental details of the sensors, calibration, and ulf-MR benchmarking are presented in this report.
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8.
  • Constantinian, K. Y., et al. (författare)
  • Hybrid superconducting mesa-heterostructure with manganite-ruthenate interlayer
  • 2014
  • Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 507:Part 4, s. Art. no. 042007-
  • Konferensbidrag (refereegranskat)abstract
    • We present experimental data on Josephson effect in hybrid superconducting mesa-heterostructures (HSMH) with composite manganite-ruthenate interlayer. The HSMH base electrode consisted of the cuprate superconductor YBa 2Cu3O7 grown epitaxially on a NdGaO substrate using laser ablation. The interlayer was composed from in-situ deposited SrRuO3 (F1) and La0.7Sr0.3MnO3 (F2) thin films, each characterized by different directions of magnetization. The top electrode was Nb/Au thin film. A superconducting current was observed when the interlayer thickness was well above the correlation length, determined by the exchange field in F1 and F2. Obtained IC (H) dependences and non-sinusoidal current-phase relation evaluated from microwave measurements are discussed in terms of generation of long-range spin triplet superconducting current component in heterostructures with interfaces of singlet superconductors and bilayer ferromagnetic materials with different spatial directions of magnetization.
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9.
  • Kalaboukhov, Alexei, 1975, et al. (författare)
  • Electrical and structural properties of ABO3/SrTiO3 interfaces
  • 2012
  • Ingår i: Materials Research Society Symposium Proceedings. - Warrendale, Pa. : Springer Science and Business Media LLC. - 0272-9172. - 9781605114316 ; 1454, s. 167-172, s. 167-172
  • Konferensbidrag (refereegranskat)abstract
    • Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.
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10.
  • Kalaboukhov, Alexei, 1975, et al. (författare)
  • Improved cationic stoichiometry and insulating behavior at the interface of LaAlO3/SrTiO3 formed at high oxygen pressure during pulsed-laser deposition
  • 2011
  • Ingår i: Europhysics Letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 93:3
  • Tidskriftsartikel (refereegranskat)abstract
    • Medium-energy ion spectroscopy, MEIS, and scanning transmission electron microscopy, STEM, were used to correlate the atomic structure of LaAlO3/SrTiO3 interfaces with their electrical properties. Interfaces were prepared at high (5x10(-2) mbar) and low (10(-4) mbar) oxygen pressure by pulsed-laser deposition. The high-oxygen-pressure heterostructures were insulating for all thicknesses while the low-oxygen-pressure ones became metallic for thicknesses above 4 unit cells. MEIS data show enhancement of the Sr surface peak and suppression of the La one in interfaces prepared at low oxygen pressure, which is interpreted as a La-Sr intermixing. The effect was considerably smaller in high-oxygen-pressure samples. Analysis of high-angle annular-dark-field STEM images of the LAO films also indicates intermixing between La and Sr in low-oxygen-pressure samples, supporting MEIS data. Our results reveal the important role of oxygen pressure on the formation of the interface electron gas. Copyright (C) EPLA, 2011
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