| 1. |
- Lemme, Max C., 1970-, et al.
(författare)
-
Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate
- 2003
-
Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 810-817
-
Tidskriftsartikel (refereegranskat)abstract
- The fabrication and characterization of nanoscale n- and p-type multi-wire metal-oxide semiconductor field effect transistors (MOSFETs) with a triple gate structure on silicon-on-insulator material (SOI) is described in this paper. Experimental results are compared to simulation with special emphasis on the influence of channel width on the subthreshold behavior. Experiment and simulation show that the threshold voltage depends strongly on the wire width at dimensions below 100 urn. It is further shown that the transition from partial to full channel depletion is dependent on channel geometry. Finally, an increased on-current per chip area is demonstrated for triple-gate SOI MOSFETs compared to planar SOI devices. (C) 2003 Elsevier Science B.V. All rights reserved.
|
|
| 2. |
- Lemme, Max C., 1970-, et al.
(författare)
-
Subthreshold behavior of triple-gate MOSFETs on SOI material
- 2004
-
Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:4, s. 529-534
-
Tidskriftsartikel (refereegranskat)abstract
- The fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented. The output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE). In addition, these triple-gate structures are compared with planar SOI devices of comparable dimensions. The influence of biasing the substrate (back gate) is analyzed and compared to simulation data.
|
|
| 3. |
- Lemme, Max C., 1970-, et al.
(författare)
-
Subthreshold characteristics of p-type triple-gate MOSFETs
- 2003
-
Ingår i: ESSDERC 2003. - NEW YORK : IEEE. ; , s. 123-126
-
Konferensbidrag (refereegranskat)abstract
- The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
|
|
| 4. |
|
|
