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- Adcox, K, et al.
(författare)
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PHENIX detector overview
- 2003
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - 0167-5087. ; 499:2-3, s. 469-479
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Tidskriftsartikel (refereegranskat)abstract
- The PHENIX detector is designed to perform a broad study of A-A, p-A, and p-p collisions to investigate nuclear matter under extreme conditions. A wide variety of probes, sensitive to all timescales, are used to study systematic variations with species and energy as well as to measure the spin structure of the nucleon. Designing for the needs of the heavy-ion and polarized-proton programs has produced a detector with unparalleled capabilities. PHENIX measures electron and muon pairs, photons, and hadrons with excellent energy and momentum resolution. The detector consists of a large number of subsystems that are discussed in other papers in this volume. The overall design parameters of the detector are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 3. |
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| 5. |
- Kuznetsov, A. Y., et al.
(författare)
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Dynamic annealing in ion implanted SiC : Flux versus temperature dependence
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 94:11, s. 7112-7115
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Tidskriftsartikel (refereegranskat)abstract
- A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9x10(10)-4.9x10(13) ions/cm(2) s) and keeping the implantation dose constant at 5x10(14) Si+/cm(2). The implants were performed both at room and elevated temperatures, up to 220 degreesC. Rutherford backscattering spectrometry in the channelling mode using 2 MeV He+ ions was employed to measure ion implantation damage profiles in the samples. For the flux interval used the most, pronounced dynamic annealing effect was detected at 80-160degreesC, having an activation energy of 1.3 eV. For example, at 100degreesC the amount of disordered Si atoms at the projected ion range is reduced by a factor of 4 by decreasing the ion flux from 4.9x10(13) to 1.9x10(10) ions/cm(2) s. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices. In addition, two regions for the damage accumulation - at the surface and at the damage peak for 100 keV Si+ ions - are observed.
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| 6. |
- Leveque, Patrick, et al.
(författare)
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Vacancy and interstitial depth profiles in ion-implanted silicon.
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:2, s. 871-877
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Tidskriftsartikel (refereegranskat)abstract
- An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the interstitial carbon-substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.
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| 7. |
- Shen, Weiming, et al.
(författare)
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Reference Architecture for Internet Based Intelligent Shop Floors
- 2000
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Ingår i: Proceedings of SPIE Conference on Network Intelligence. - : SPIE - International Society for Optical Engineering. ; , s. 63-72
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Konferensbidrag (refereegranskat)abstract
- Global competitiveness is causing manufacturing companies to change the way they do business. New ways of viewing markets and competition have led the movement from legacy information systems to Internet-based environments. Success in manufacturing depends on being able to respond quickly, accurately and consistently to the changing needs of the marketplace. The need to control and optimize processes and to vary the necessary parameters to obtain the best product on time and on specification has fostered a change from centralized or hierarchical to distributed manufacturing control systems. This paper proposes a reference architecture for Internet-based intelligent shop floors. Internet, Web technologies, and intelligent agents are the key technologies adopted in this approach. The reference architecture provides the framework for components of a complex control system to work together as a whole rather than as a disjoint set. It encompasses both information architecture and integration methodologies. The primary aspects of the reference architecture under consideration include: (1) statement of scope and purpose; (2) domain analysis; (3) architectural specification; and (4) methodology for architectural development and system design.
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| 8. |
- Wang, Lihui, et al.
(författare)
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A Web-based Collaborative Workspace Using Java 3D
- 2001
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Ingår i: The Sixth International Conference on, 2001 Computer Supported Cooperative Work in Design. - : IEEE. - 0660184931 ; , s. 77-82
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Konferensbidrag (refereegranskat)abstract
- The paper presents a framework for building Web-based collaborative workspaces using the latest Java technologies-Java 3D, JavaServer Page (JSP), and Java Servlet. This Web-based approach allows designers, engineers and production managers to share a common workspace that can be used for design review, production monitoring, remote control, and troubleshooting, based on a set of interactive Java 3D models that represent the physical world with common interests. Following a brief overview of the related research work, the paper discusses the Java 3D concept from its scene graph structure to behavior control, and explains our approach to building Web-based collaborative workspaces using Java 3D. The proposed framework uses the popular client-server architecture and view-control-model design pattern with a secured session control. Control logic and the interfaces, which interact with the real world, are handled by an application server through servlets. The benefits enabled by the framework include reduced network traffic, increased flexibility of remote monitoring, interactive control, Web-based synchronous collaboration and quick response. It also shows significant potential for various Web-based real-time and distributed applications.
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| 9. |
- Wang, Lihui, et al.
(författare)
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Java 3D-Enabled Cyber Workspace
- 2002
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Ingår i: Communications of the ACM. - : Association for Computing Machinery (ACM). - 0001-0782 .- 1557-7317. ; 45:11, s. 45-49
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Tidskriftsartikel (refereegranskat)abstract
- Along with the browser paradigm, Java has fundamentally changed the work environment, helping produce compelling applications for collaborating over the Internet.
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| 10. |
- Wong, K.Y., et al.
(författare)
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Electronic state of nitrogen containing polypyridine at the interfaces with model sulfonic acid containing polymer and molecule
- 2003
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Konferensbidrag (refereegranskat)abstract
- We present results of an X-ray photoelectron spectroscopy (XPS) study of the interfaces between polypyridine (PPy) and model sulfonic acid containing polymer and molecule. We show that the N 1s level splits reflecting protonation of a substantial fraction of the PPy N sites. Density functional theory (DFT) is employed to compare excitation energies, bond angles, highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), and density of states of oligomers of pyridine and protonated pyridine. These results are in accord with the proposed origin of the red shift of the emitted light under forward bias in color-variable alternating-current light emitting (SCALE) devices.
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