| 1. |
- Chen, Si, et al.
(författare)
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A graphene field-effect capacitor sensor in electrolyte
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:15, s. 154106-
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Tidskriftsartikel (refereegranskat)abstract
- The unique electronic properties of graphene are exploited for field-effect sensing in both capacitor and transistor modes when operating the sensor device in electrolyte. The device is fabricated using large-area graphene thin films prepared by means of layer-by-layer stacking. Although essentially the same device, its operation in the capacitor mode is found to yield more information than in the transistor mode. The capacitor sensor can simultaneously detect the variations of surface potential and electrical-double-layer capacitance at the graphene/electrolyte interface when altering the ion concentration. The capacitor-mode operation further facilitates studies of the molecular binding-adsorption kinetics by monitoring the capacitance transient
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| 3. |
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| 4. |
- Hu, Cheng, et al.
(författare)
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Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:9, s. 092101-
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Tidskriftsartikel (refereegranskat)abstract
- Microwave annealing (MWA) is investigated as an alternative technique to rapid thermal processing with halogen lamp heating (RTP) for low-temperature silicide formation on epitaxially grown Si0.81Ge0.19 layers. Phase formation, resistivity mapping, morphology analysis, and composition evaluation indicate that the formation of low-resistivity NiSi1-xGex by means of MWA occurs at temperatures about 100 degrees C lower than by RTP. Under similar annealing conditions, more severe strain relaxation and defect generation are therefore found in the remaining Si0.81Ge0.19 layers treated by MWA. Although silicidation by microwave heating is in essence also due to thermal effects, details in heating mechanisms differ from RTP.
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| 5. |
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| 6. |
- Liu, Zhiying, 1982-, et al.
(författare)
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Solution-Processed Logic Gates Based On Nanotube/Polymer Composite
- 2013
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 60:8, s. 2542-2547
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Tidskriftsartikel (refereegranskat)abstract
- Hysteresis-free logic gates capable of operation at 100 kHz are fabricated basing on local-gate thin-film transistors with their channel featuring solution-processed composite films of single-walled carbon nanotubes (SWCNTs) and poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). Using dip-coating for deposition of composite films, high-density SWCNTs are found to be embedded in an F8T2 layer and thus being kept from the underlying AlOx gate dielectric by a certain distance. The presence of the F8T2 interlayer effectively suppresses hysteresis although it also weakens the gate electrostatic control. The fabricated transistors are characterized by nil hysteresis, high carrier mobility, large ON/OFF current ratio, low operation voltage, small subthreshold swing, and remarkable scalability. These properties are crucial for the realization of the well-performing logic circuits.
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| 7. |
- Luo, Jun, et al.
(författare)
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Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
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| 8. |
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| 9. |
- Luo, Jun, et al.
(författare)
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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
- 2011
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE Institute of Electrical and Electronics. - 0018-9383 .- 1557-9646. ; 58:7, s. 1898-1906
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Tidskriftsartikel (refereegranskat)abstract
- This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.
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| 10. |
- Luo, Jun, et al.
(författare)
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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:3
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Tidskriftsartikel (refereegranskat)abstract
- The formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C is reported. Without Pt (x=0) and for t(Ni)< 4 nm, epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 degrees C. For t(Ni)>= 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x=1) and for t(Pt)=1-20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1-xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.
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